VBZA6679 Specs and Replacement
Type Designator: VBZA6679
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 455 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 typ Ohm
Package: SO8
VBZA6679 substitution
- MOSFET ⓘ Cross-Reference Search
VBZA6679 datasheet
vbza6679.pdf
VBZA6679 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.009 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 9 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G S ... See More ⇒
Detailed specifications: VBZA4800, VBZA4805, VBZA4850, VBZA4936, VBZA4946, VBZA4953, VBZA4953A, VBZA5670, K3569, VBZA7240, VBZA7470, VBZA8858, VBZA9358, VBZA9410, VBZA9435, VBZA9926, VBZA9926A
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