All MOSFET. VBZA6679 Datasheet

 

VBZA6679 Datasheet and Replacement


   Type Designator: VBZA6679
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 455 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009(typ) Ohm
   Package: SO8
 

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VBZA6679 Datasheet (PDF)

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VBZA6679

VBZA6679www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.009 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 9APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G S

Datasheet: VBZA4800 , VBZA4805 , VBZA4850 , VBZA4936 , VBZA4946 , VBZA4953 , VBZA4953A , VBZA5670 , SPP20N60C3 , VBZA7240 , VBZA7470 , VBZA8858 , VBZA9358 , VBZA9410 , VBZA9435 , VBZA9926 , VBZA9926A .

History: SE100150G | SI8499DB | CSD18534Q5A | FSS9130D | AP3P7R0EM | VBZA4953 | JCS4N65R

Keywords - VBZA6679 MOSFET datasheet

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