All MOSFET. VBZA7470 Datasheet

 

VBZA7470 MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBZA7470
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014(typ) Ohm
   Package: SO8

 VBZA7470 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBZA7470 Datasheet (PDF)

 ..1. Size:1892K  cn vbsemi
 vbza7470.pdf

VBZA7470 VBZA7470

VBZA7470www.VBsemi.comN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.014 at VGS = 10 V TrenchFET Power MOSFET1040 15 nC 100 % Rg Tested0.016 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/ECAPPLICATIONS Synchronous Rectificat

 9.1. Size:1045K  cn vbsemi
 vbza7240.pdf

VBZA7470 VBZA7470

VBZA7240www.VBsemi.comP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.013 at VGS = - 10 V - 11 100 % Rg Tested- 40 33 nC0.015 at VGS = - 4.5 V - 10 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8GSD1 8

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IPD040N03L

 

 
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