FDC5614P MOSFET Datasheet: P-Ch, 60V, 3A. Full specification with pinout and replacement list

FDC5614P Specs and Replacement

Type Designator: FDC5614P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 90 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm

Package: SSOT6

FDC5614P substitution

- MOSFET ⓘ Cross-Reference Search

FDC5614P datasheet

..1. Size:140K fairchild semi
fdc5614p.pdf pdf_icon

February 2002 FDC5614P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild s high 3 A, 60 V. RDS(ON) = 0.105 @ VGS = 10 V voltage PowerTrench process. It has been optimized for RDS(ON) = 0.135 @ VGS = 4.5 V power management applications. Fast switching speed Applic... See More ⇒

..2. Size:140K onsemi
fdc5614p.pdf pdf_icon

..3. Size:2795K cn vbsemi
fdc5614p.pdf pdf_icon

FDC5614P www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) Typ. ID (A) d Qg (TYP.) 100 % Rg and UIS tested 0.050 at VGS = -10 V -6.5 -60 10.1 nC 0.060 at VGS = -4.5 V -5.1 APPLICATIONS Load switches DC/DC converter TSOP-6 Top View (4) S 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm ... See More ⇒

8.1. Size:77K fairchild semi
fdc5612 f095.pdf pdf_icon

December 2004 FDC5612 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 4.3 A, 60 V. RDS(ON) = 0.055 @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.064 @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Low gate charge (12.5nC typical). Thes... See More ⇒