Справочник MOSFET. FDC5614P

 

FDC5614P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDC5614P
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1.6 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 90 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.105 Ohm
   Тип корпуса: SSOT6

 Аналог (замена) для FDC5614P

 

 

FDC5614P Datasheet (PDF)

 ..1. Size:140K  fairchild semi
 fdc5614p.pdf

FDC5614P FDC5614P

February 2002 FDC5614P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchilds high 3 A, 60 V. RDS(ON) = 0.105 @ VGS = 10 V voltage PowerTrench process. It has been optimized for RDS(ON) = 0.135 @ VGS = 4.5 V power management applications. Fast switching speed Applic

 ..2. Size:140K  onsemi
 fdc5614p.pdf

FDC5614P FDC5614P

February 2002 FDC5614P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchilds high 3 A, 60 V. RDS(ON) = 0.105 @ VGS = 10 V voltage PowerTrench process. It has been optimized for RDS(ON) = 0.135 @ VGS = 4.5 V power management applications. Fast switching speed Applic

 ..3. Size:2795K  cn vbsemi
 fdc5614p.pdf

FDC5614P FDC5614P

FDC5614Pwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) ( ) Typ. ID (A) d Qg (TYP.) 100 % Rg and UIS tested0.050 at VGS = -10 V -6.5-60 10.1 nC 0.060 at VGS = -4.5 V -5.1APPLICATIONS Load switches DC/DC converterTSOP-6 Top View(4) S1 6 (3) G3 mm 5 2 3 4 (1, 2, 5, 6) D2.85 mm

 8.1. Size:77K  fairchild semi
 fdc5612 f095.pdf

FDC5614P FDC5614P

December 2004FDC561260V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 4.3 A, 60 V. RDS(ON) = 0.055 @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 0.064 @ VGS = 6 Vconverters using either synchronous or conventionalswitching PWM controllers. Low gate charge (12.5nC typical).Thes

 8.2. Size:78K  fairchild semi
 fdc5612.pdf

FDC5614P FDC5614P

December 2004FDC561260V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 4.3 A, 60 V. RDS(ON) = 0.055 @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 0.064 @ VGS = 6 Vconverters using either synchronous or conventionalswitching PWM controllers. Low gate charge (12.5nC typical).Thes

 8.3. Size:177K  onsemi
 fdc5612.pdf

FDC5614P FDC5614P

FDC561260V N-Channel PowerTrench MOSFETFeaturesGeneral Description 4.3 A, 60 V. RDS(ON) = 0.055 @ VGS = 10 VThis N-Channel MOSFET has been designedspecifically to improve the overall efficiency of DC/DC RDS(ON) = 0.064 @ VGS = 6 Vconverters using either synchronous or conventional Low gate charge (12.5nC typical).switching PWM controllers.These MOSFETs featur

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