All MOSFET. VBZA8858 Datasheet

 

VBZA8858 Datasheet and Replacement


   Type Designator: VBZA8858
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 755 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: SO8
 

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VBZA8858 Datasheet (PDF)

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VBZA8858

VBZA8858www.VBsemi.comN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = 10 V 10 100 % Rg and UIS TestedN-Channel 30 13 Compliant to RoHS Directive 2002/95/EC0.013 at VGS = 4.5 V 9APPLICATIONS0.021 at VGS = - 10 V -

Datasheet: VBZA4936 , VBZA4946 , VBZA4953 , VBZA4953A , VBZA5670 , VBZA6679 , VBZA7240 , VBZA7470 , AON7410 , VBZA9358 , VBZA9410 , VBZA9435 , VBZA9926 , VBZA9926A , VBZA9936 , VBZA9945 , VBZB8205A .

History: RFM15N05L | SHD226305B | PDC3908X | DACMI450N120BZK3 | YJL2301D | AP4409AGEM-HF | CJD02N65

Keywords - VBZA8858 MOSFET datasheet

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