All MOSFET. VBZA8858 Datasheet

 

VBZA8858 MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBZA8858
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20(max) nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 755 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: SO8

 VBZA8858 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBZA8858 Datasheet (PDF)

 ..1. Size:1812K  cn vbsemi
 vbza8858.pdf

VBZA8858 VBZA8858

VBZA8858www.VBsemi.comN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = 10 V 10 100 % Rg and UIS TestedN-Channel 30 13 Compliant to RoHS Directive 2002/95/EC0.013 at VGS = 4.5 V 9APPLICATIONS0.021 at VGS = - 10 V -

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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