VBZB8205A Datasheet and Replacement
Type Designator: VBZB8205A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 5.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12 nC
trⓘ - Rise Time: 330 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024(typ) Ohm
Package: TSOP6
VBZB8205A Datasheet (PDF)
vbzb8205a.pdf

VBZB8205Awww.VBsemi.comDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.024 at VGS = 4.5 V Available6.0 100 % Rg Tested20RoHS*0.028 at VGS = 2.5 V Compliant to RoHS Directive 2002/95/EC5.0COMPLIANTTSOP6DDTop ViewS1 1 6 G1D1/D2 2 5 D1/D2G1 G
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: FDP5500
Keywords - VBZB8205A MOSFET datasheet
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History: FDP5500



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