VBZB8205A Specs and Replacement

Type Designator: VBZB8205A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 330 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 typ Ohm

Package: TSOP6

VBZB8205A substitution

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VBZB8205A datasheet

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VBZB8205A

VBZB8205A www.VBsemi.com Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.024 at VGS = 4.5 V Available 6.0 100 % Rg Tested 20 RoHS* 0.028 at VGS = 2.5 V Compliant to RoHS Directive 2002/95/EC 5.0 COMPLIANT TSOP6 D D Top View S1 1 6 G1 D1/D2 2 5 D1/D2 G1 G... See More ⇒

Detailed specifications: VBZA8858, VBZA9358, VBZA9410, VBZA9435, VBZA9926, VBZA9926A, VBZA9936, VBZA9945, IRFB3607, VBZC8205A, VBZC8205B, VBZC8810, VBZE04N03, VBZE06N02, VBZE06N03, VBZE100N02, VBZE100N03

Keywords - VBZB8205A MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.