All MOSFET. VBZB8205A Datasheet

 

VBZB8205A Datasheet and Replacement


   Type Designator: VBZB8205A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 330 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024(typ) Ohm
   Package: TSOP6
 

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VBZB8205A Datasheet (PDF)

 ..1. Size:1138K  cn vbsemi
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VBZB8205A

VBZB8205Awww.VBsemi.comDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.024 at VGS = 4.5 V Available6.0 100 % Rg Tested20RoHS*0.028 at VGS = 2.5 V Compliant to RoHS Directive 2002/95/EC5.0COMPLIANTTSOP6DDTop ViewS1 1 6 G1D1/D2 2 5 D1/D2G1 G

Datasheet: VBZA8858 , VBZA9358 , VBZA9410 , VBZA9435 , VBZA9926 , VBZA9926A , VBZA9936 , VBZA9945 , AON7506 , VBZC8205A , VBZC8205B , VBZC8810 , VBZE04N03 , VBZE06N02 , VBZE06N03 , VBZE100N02 , VBZE100N03 .

History: YJL2302B | UTC654 | VBZE04N03 | SSM3K56CT | AUIRFP4227 | IXTJ3N150 | AM90N06-04M2B

Keywords - VBZB8205A MOSFET datasheet

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