VBZE04N03 MOSFET. Datasheet pdf. Equivalent
Type Designator: VBZE04N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 235 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 140 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 81(max) nC
Rise Time (tr): 11 nS
Drain-Source Capacitance (Cd): 1525 pF
Maximum Drain-Source On-State Resistance (Rds): 0.003(typ) Ohm
Package: TO252
VBZE04N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VBZE04N03 Datasheet (PDF)
vbze04n03.pdf
VBZE04N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.003 at VGS = 10 V 14030 72 nC0.006 at VGS = 4.5 V 100APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETA
vbze06n02.pdf
VBZE06N02www.VBsemi.comN-Channel 20-V (D-S)MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)aD 175_C Maximum Junction TemperatureD 100% Rg Tested 0.006 @ VGS = 4.5 V 10020200.008 @ VGS = 2.5 V 90DTO-252GDrain Connected to TabG D STop View SN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter
vbze06n03.pdf
VBZE06N03www.VBsemi.comN-Channel 20-V (D-S)MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) RDS(on) (W) ID (A)aD 175_C Maximum Junction TemperatureD 100% Rg Tested 0.005 @ VGS = 4.5 V 11020200.008 @ VGS = 2.5 V90DTO-252GDrain Connected to TabG D STop View SN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Paramete
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
