VBZE60N02 Specs and Replacement

Type Designator: VBZE60N02

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 150 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 1725 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 typ Ohm

Package: TO252

VBZE60N02 substitution

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VBZE60N02 datasheet

 ..1. Size:2382K  cn vbsemi
 vbze60n02.pdf pdf_icon

VBZE60N02

VBZE60N02 www.VBsemi.com N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.003 at VGS = 4.5 V 150 20 92nC 0.006at VGS = 2.5 V 100 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET AB... See More ⇒

 6.1. Size:877K  cn vbsemi
 vbze60n03.pdf pdf_icon

VBZE60N02

VBZE60N03 www.VBsemi.com N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, c Qg (Typ.) 100 % Rg and UIS Tested RoHS 85 0.007at VGS = 10 V COMPLIANT 40 20 nC 53 0.010at VGS = 4.5 V APPLICATIONS D Synchronous Rectification Power Supplies TO-252 G G D S S Top View N-Channel MOSFET ABSOLUTE MAXIM... See More ⇒

Detailed specifications: VBZE45N03, VBZE50N03, VBZE50N04, VBZE50N06, VBZE50P03, VBZE50P04, VBZE50P06, VBZE5N20, AOD4184A, VBZE60N03, VBZE70N03, VBZE75N03, VBZE7843, VBZE80N03, VBZE80N06, VBZE80N10, VBZE80P03

Keywords - VBZE60N02 MOSFET specs

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