All MOSFET. VBZE60N02 Datasheet

 

VBZE60N02 Datasheet and Replacement


   Type Designator: VBZE60N02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 1725 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003(typ) Ohm
   Package: TO252
 

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VBZE60N02 Datasheet (PDF)

 ..1. Size:2382K  cn vbsemi
 vbze60n02.pdf pdf_icon

VBZE60N02

VBZE60N02www.VBsemi.comN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.003 at VGS = 4.5 V 15020 92nC0.006at VGS = 2.5 V 100APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETAB

 6.1. Size:877K  cn vbsemi
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VBZE60N02

VBZE60N03www.VBsemi.comN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS850.007at VGS = 10 V COMPLIANT 40 20 nC530.010at VGS = 4.5 V APPLICATIONSD Synchronous Rectification Power SuppliesTO-252GG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIM

Datasheet: VBZE45N03 , VBZE50N03 , VBZE50N04 , VBZE50N06 , VBZE50P03 , VBZE50P04 , VBZE50P06 , VBZE5N20 , HY1906P , VBZE60N03 , VBZE70N03 , VBZE75N03 , VBZE7843 , VBZE80N03 , VBZE80N06 , VBZE80N10 , VBZE80P03 .

History: DMN3200U | FTK12N65F | AFN3456 | CET3252 | DMN6017SK3 | NCE0159 | IPD16CN10NG

Keywords - VBZE60N02 MOSFET datasheet

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