FDC610PZ Specs and Replacement
Type Designator: FDC610PZ
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 4.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 145 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
Package: SSOT6
FDC610PZ substitution
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FDC610PZ datasheet
fdc610pz.pdf
August 2007 FDC610PZ tm P-Channel PowerTrench MOSFET 30V, 4.9A, 42m Features General Description Max rDS(on) = 42m at VGS = 10V, ID = 4.9A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Max rDS(on) = 75m at VGS = 4.5V, ID = 3.7A been especially tailored to minimize the on-state resistance and... See More ⇒
fdc610pz.pdf
FDC610PZ P-Channel PowerTrench MOSFET 30V, 4.9A, 42m General Description Features This P-Channel MOSFET is produced using ON Max rDS(on) = 42m at VGS = 10V, ID = 4.9A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 75m at VGS = 4.5V, ID = 3.7A been especially tailored to minimize the on-state resistance and yet maintain low gate... See More ⇒
fdc610pz.pdf
SMD Type MOSFET P-Channel MOSFET FDC610PZ Features ( ) SOT-23-6 Unit mm VDS (V) =-30V +0.1 0.4 -0.1 ID =-4.9 A (VGS = 25V) RDS(ON) 42m (VGS =-10V) 5 4 6 RDS(ON) 75m (VGS =-4.5V) 2 3 1 +0.02 0.15 -0.02 +0.01 -0.01 +0.2 -0.1 D D 1 6 D D 5 2 1 Drain 4 Source 2 Drain 5 Drain 3 Gate 6 Drain S G 3 4 3 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit ... See More ⇒
Detailed specifications: STU3055L , FDC365P , FDC5614P , FDC5661N-F085 , FDC602P , FDC604P , FDC606P , FDC608PZ , IRF640 , FDC6310P , FDC6312P , FDC6318P , FDC6320C , STU303S , FDC6321C , STU3030NLS , FDC6327C .
Keywords - FDC610PZ MOSFET specs
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