FDC610PZ Datasheet and Replacement
Type Designator: FDC610PZ
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 4.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 145 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
Package: SSOT6
FDC610PZ substitution
FDC610PZ Datasheet (PDF)
fdc610pz.pdf

August 2007FDC610PZtmP-Channel PowerTrench MOSFET 30V, 4.9A, 42mFeatures General Description Max rDS(on) = 42m at VGS = 10V, ID = 4.9AThis P-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has Max rDS(on) = 75m at VGS = 4.5V, ID = 3.7Abeen especially tailored to minimize the on-state resistance and
fdc610pz.pdf

FDC610PZP-Channel PowerTrench MOSFET30V, 4.9A, 42mGeneral DescriptionFeaturesThis P-Channel MOSFET is produced using ON Max rDS(on) = 42m at VGS = 10V, ID = 4.9ASemiconductors advanced PowerTrench process that has Max rDS(on) = 75m at VGS = 4.5V, ID = 3.7Abeen especially tailored to minimize the on-state resistance and yet maintain low gate
fdc610pz.pdf

SMD Type MOSFETP-Channel MOSFETFDC610PZFeatures( )SOT-23-6 Unit:mmVDS (V) =-30V+0.10.4 -0.1ID =-4.9 A (VGS =25V)RDS(ON) 42m (VGS =-10V)5 46RDS(ON) 75m (VGS =-4.5V)2 31+0.020.15 -0.02+0.01-0.01+0.2-0.1DD1 6D D521 Drain 4 Source2 Drain 5 Drain3 Gate 6 DrainSG3 43Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit
Datasheet: STU3055L , FDC365P , FDC5614P , FDC5661N-F085 , FDC602P , FDC604P , FDC606P , FDC608PZ , IRFP460 , FDC6310P , FDC6312P , FDC6318P , FDC6320C , STU303S , FDC6321C , STU3030NLS , FDC6327C .
History: IRL630A | SM2558NUB | QM01N65D | BUK102-50GL | 2SK4096LS-1E | IRFUC20 | IRFL210PBF
Keywords - FDC610PZ MOSFET datasheet
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History: IRL630A | SM2558NUB | QM01N65D | BUK102-50GL | 2SK4096LS-1E | IRFUC20 | IRFL210PBF



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