FDC610PZ - описание и поиск аналогов

August 2007 FDC610PZ tm P-Channel PowerTrench MOSFET 30V, 4.9A, 42m Features General Description Max rDS(on) = 42m at VGS = 10V, ID = 4.9A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Max rDS(on) = 75m at VGS = 4.5V, ID = 3.7A been especially tailored to minimize the on-state resistance and

FDC610PZ P-Channel PowerTrench MOSFET 30V, 4.9A, 42m General Description Features This P-Channel MOSFET is produced using ON Max rDS(on) = 42m at VGS = 10V, ID = 4.9A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 75m at VGS = 4.5V, ID = 3.7A been especially tailored to minimize the on-state resistance and yet maintain low gate

SMD Type MOSFET P-Channel MOSFET FDC610PZ Features ( ) SOT-23-6 Unit mm VDS (V) =-30V +0.1 0.4 -0.1 ID =-4.9 A (VGS = 25V) RDS(ON) 42m (VGS =-10V) 5 4 6 RDS(ON) 75m (VGS =-4.5V) 2 3 1 +0.02 0.15 -0.02 +0.01 -0.01 +0.2 -0.1 D D 1 6 D D 5 2 1 Drain 4 Source 2 Drain 5 Drain 3 Gate 6 Drain S G 3 4 3 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit