FDC610PZ - параметры транзистора MOSFET, его аналоги, datasheet

FDC610PZ Datasheet (PDF)

..1. Size:560K fairchild semi
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August 2007FDC610PZtmP-Channel PowerTrench MOSFET 30V, 4.9A, 42mFeatures General Description Max rDS(on) = 42m at VGS = 10V, ID = 4.9AThis P-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has Max rDS(on) = 75m at VGS = 4.5V, ID = 3.7Abeen especially tailored to minimize the on-state resistance and

..2. Size:442K onsemi
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FDC610PZP-Channel PowerTrench MOSFET30V, 4.9A, 42mGeneral DescriptionFeaturesThis P-Channel MOSFET is produced using ON Max rDS(on) = 42m at VGS = 10V, ID = 4.9ASemiconductors advanced PowerTrench process that has Max rDS(on) = 75m at VGS = 4.5V, ID = 3.7Abeen especially tailored to minimize the on-state resistance and yet maintain low gate

..3. Size:292K kexin
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SMD Type MOSFETP-Channel MOSFETFDC610PZFeatures( )SOT-23-6 Unit:mmVDS (V) =-30V+0.10.4 -0.1ID =-4.9 A (VGS =25V)RDS(ON) 42m (VGS =-10V)5 46RDS(ON) 75m (VGS =-4.5V)2 31+0.020.15 -0.02+0.01-0.01+0.2-0.1DD1 6D D521 Drain 4 Source2 Drain 5 Drain3 Gate 6 DrainSG3 43Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

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