All MOSFET. VBZE9N03 Datasheet

 

VBZE9N03 MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBZE9N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 85 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 70(max) nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 1525 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007(typ) Ohm
   Package: TO252

 VBZE9N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBZE9N03 Datasheet (PDF)

 ..1. Size:2374K  cn vbsemi
vbze9n03.pdf

VBZE9N03 VBZE9N03

VBZE9N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007at VGS = 10 V 8530 70nC0.009at VGS = 4.5 V 58APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETABSOLUT

 9.1. Size:829K  cn vbsemi
vbze90n03.pdf

VBZE9N03 VBZE9N03

VBZE90N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.003.8at VGS = 10 V 12030 70 nC0.006at VGS = 4.5 V 100APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETA

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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