VBZE9N03 Specs and Replacement
Type Designator: VBZE9N03
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 85 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 1525 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 typ Ohm
Package: TO252
VBZE9N03 substitution
- MOSFET ⓘ Cross-Reference Search
VBZE9N03 datasheet
vbze9n03.pdf
VBZE9N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007at VGS = 10 V 85 30 70nC 0.009at VGS = 4.5 V 58 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET ABSOLUT... See More ⇒
vbze90n03.pdf
VBZE90N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.003.8at VGS = 10 V 120 30 70 nC 0.006at VGS = 4.5 V 100 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET A... See More ⇒
Detailed specifications: VBZE70N03, VBZE75N03, VBZE7843, VBZE80N03, VBZE80N06, VBZE80N10, VBZE80P03, VBZE90N03, 20N60, VBZFB06N02, VBZFB10N20, VBZFB12P10, VBZFB15N10, VBZFB20N06, VBZFB20P06, VBZFB30N06, VBZFB40N03
Keywords - VBZE9N03 MOSFET specs
VBZE9N03 cross reference
VBZE9N03 equivalent finder
VBZE9N03 pdf lookup
VBZE9N03 substitution
VBZE9N03 replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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