VBZJ12N06 Specs and Replacement

Type Designator: VBZJ12N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 120 max pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.076 Ohm

Package: SOT223

VBZJ12N06 substitution

- MOSFET ⓘ Cross-Reference Search

 

VBZJ12N06 datasheet

 ..1. Size:1088K  cn vbsemi
vbzj12n06.pdf pdf_icon

VBZJ12N06

VBZJ12N06 www.VBsemi.com N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.076 at VGS = 10 V 4 RoHS 10 nC COMPLIANT 60 APPLICATIONS 0.085 at VGS = 4.5 V 3 Load Switches for Portable Devices D SOT-223-3 D G S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless o... See More ⇒

Detailed specifications: VBZFB40P03, VBZFB40P04, VBZFB40P06, VBZFB50N03, VBZFB50N06, VBZFB60N03, VBZFB70N03, VBZFB80N03, P55NF06, VBZL100N04, VBZL120N08, VBZL150N03, VBZL30N06, VBZL45N03, VBZL50N06, VBZL60N03, VBZL60N06

Keywords - VBZJ12N06 MOSFET specs

 VBZJ12N06 cross reference

 VBZJ12N06 equivalent finder

 VBZJ12N06 pdf lookup

 VBZJ12N06 substitution

 VBZJ12N06 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.