VBZJ12N06 MOSFET. Datasheet pdf. Equivalent
Type Designator: VBZJ12N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 120(max) pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.076 Ohm
Package: SOT223
VBZJ12N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VBZJ12N06 Datasheet (PDF)
..1. Size:1088K cn vbsemi
vbzj12n06.pdf
vbzj12n06.pdf
VBZJ12N06www.VBsemi.comN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 10 V 4RoHS10 nC COMPLIANT60APPLICATIONS0.085 at VGS = 4.5 V 3 Load Switches for Portable DevicesDSOT-223-3D GSDGSN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless o
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
