All MOSFET. VBZJ12N06 Datasheet

 

VBZJ12N06 Datasheet and Replacement


   Type Designator: VBZJ12N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 120(max) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.076 Ohm
   Package: SOT223
 

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VBZJ12N06 Datasheet (PDF)

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VBZJ12N06

VBZJ12N06www.VBsemi.comN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 10 V 4RoHS10 nC COMPLIANT60APPLICATIONS0.085 at VGS = 4.5 V 3 Load Switches for Portable DevicesDSOT-223-3D GSDGSN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless o

Datasheet: VBZFB40P03 , VBZFB40P04 , VBZFB40P06 , VBZFB50N03 , VBZFB50N06 , VBZFB60N03 , VBZFB70N03 , VBZFB80N03 , IRFB4115 , VBZL100N04 , VBZL120N08 , VBZL150N03 , VBZL30N06 , VBZL45N03 , VBZL50N06 , VBZL60N03 , VBZL60N06 .

History: BUK9K12-60E | 2SK888 | WMN30N80M3 | 2SJ605-Z | NCEP40PT13D | SFF240J | BUZ83

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