All MOSFET. VBZL30N06 Datasheet

 

VBZL30N06 Datasheet and Replacement


   Type Designator: VBZL30N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 665 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01(typ) Ohm
   Package: TO263
 

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VBZL30N06 Datasheet (PDF)

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VBZL30N06

VBZL30N06www.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS 100V 175 C Maximum Junction TemperatureRDS(on) VGS = 10 V 10 m Compliant to RoHS Directive 2002/95/EC23RDS(on) VGS = 4.5 V mID 100AConfiguration SingleDD2PAK (TO-263)GDGSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TA = 25 C, unle

Datasheet: VBZFB50N06 , VBZFB60N03 , VBZFB70N03 , VBZFB80N03 , VBZJ12N06 , VBZL100N04 , VBZL120N08 , VBZL150N03 , 7N65 , VBZL45N03 , VBZL50N06 , VBZL60N03 , VBZL60N06 , VBZL70N03 , VBZL80N03 , VBZL80N04 , VBZL80N06 .

History: IPT026N10N5 | MS65R190RGE | SHD225623 | RFM10N12 | SWB072R08ET | CJB08N65 | 2SK871

Keywords - VBZL30N06 MOSFET datasheet

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