VBZL30N06 Specs and Replacement

Type Designator: VBZL30N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

Cossⓘ - Output Capacitance: 665 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 typ Ohm

Package: TO263

VBZL30N06 substitution

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VBZL30N06 datasheet

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VBZL30N06

VBZL30N06 www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS 100 V 175 C Maximum Junction Temperature RDS(on) VGS = 10 V 10 m Compliant to RoHS Directive 2002/95/EC 23 RDS(on) VGS = 4.5 V m ID 100 A Configuration Single D D2PAK (TO-263) G D G S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unle... See More ⇒

Detailed specifications: VBZFB50N06, VBZFB60N03, VBZFB70N03, VBZFB80N03, VBZJ12N06, VBZL100N04, VBZL120N08, VBZL150N03, IRF630, VBZL45N03, VBZL50N06, VBZL60N03, VBZL60N06, VBZL70N03, VBZL80N03, VBZL80N04, VBZL80N06

Keywords - VBZL30N06 MOSFET specs

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