All MOSFET. VBZL45N03 Datasheet

 

VBZL45N03 Datasheet and Replacement


   Type Designator: VBZL45N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 127 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 410 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032(typ) Ohm
   Package: TO263
 

 VBZL45N03 substitution

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VBZL45N03 Datasheet (PDF)

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VBZL45N03

VBZL45N03www.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSVDS 100VAvailable 175 C Junction TemperatureRDS(on) VGS = 10 V 32mRoHS* Low Thermal Resistance PackageCOMPLIANTRDS(on) VGS = 4.5 V m34ID 45AConfiguration SingleDD2PAK (TO-263)GDGSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC

Datasheet: VBZFB60N03 , VBZFB70N03 , VBZFB80N03 , VBZJ12N06 , VBZL100N04 , VBZL120N08 , VBZL150N03 , VBZL30N06 , IRF9540 , VBZL50N06 , VBZL60N03 , VBZL60N06 , VBZL70N03 , VBZL80N03 , VBZL80N04 , VBZL80N06 , VBZL80N08 .

History: SQS466EEN

Keywords - VBZL45N03 MOSFET datasheet

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