VBZL45N03 Specs and Replacement

Type Designator: VBZL45N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 127 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 410 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 typ Ohm

Package: TO263

VBZL45N03 substitution

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VBZL45N03 datasheet

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VBZL45N03

VBZL45N03 www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS VDS 100 V Available 175 C Junction Temperature RDS(on) VGS = 10 V 32 m RoHS* Low Thermal Resistance Package COMPLIANT RDS(on) VGS = 4.5 V m 34 ID 45 A Configuration Single D D2PAK (TO-263) G D G S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC ... See More ⇒

Detailed specifications: VBZFB60N03, VBZFB70N03, VBZFB80N03, VBZJ12N06, VBZL100N04, VBZL120N08, VBZL150N03, VBZL30N06, IRF9540, VBZL50N06, VBZL60N03, VBZL60N06, VBZL70N03, VBZL80N03, VBZL80N04, VBZL80N06, VBZL80N08

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.