All MOSFET. VBZL45N03 Datasheet

 

VBZL45N03 MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBZL45N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 127 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 45 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 35 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 410 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032(typ) Ohm
   Package: TO263

 VBZL45N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBZL45N03 Datasheet (PDF)

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 vbzl45n03.pdf

VBZL45N03 VBZL45N03

VBZL45N03www.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSVDS 100VAvailable 175 C Junction TemperatureRDS(on) VGS = 10 V 32mRoHS* Low Thermal Resistance PackageCOMPLIANTRDS(on) VGS = 4.5 V m34ID 45AConfiguration SingleDD2PAK (TO-263)GDGSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC

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