All MOSFET. VBZL50N06 Datasheet

 

VBZL50N06 Datasheet and Replacement


   Type Designator: VBZL50N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 725 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003(typ) Ohm
   Package: TO263
 

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VBZL50N06 Datasheet (PDF)

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VBZL50N06

VBZL50N06www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURES TrenchFET Power MOSFETPRODUCT SUMMARY 100 % Rg and UIS TestedVDS 30V Compliant to RoHS Directive 2011/65/EURDS(on) VGS = 10 V 3 mRDS(on) VGS = 4.5 V 4 mAPPLICATIONSID 150A OR-ingConfiguration Single Server DC/DCDD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE M

Datasheet: VBZFB70N03 , VBZFB80N03 , VBZJ12N06 , VBZL100N04 , VBZL120N08 , VBZL150N03 , VBZL30N06 , VBZL45N03 , IRLZ44N , VBZL60N03 , VBZL60N06 , VBZL70N03 , VBZL80N03 , VBZL80N04 , VBZL80N06 , VBZL80N08 , VBZM100N03 .

History: HP640 | UTM4953L-S08-R

Keywords - VBZL50N06 MOSFET datasheet

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