VBZL60N03 MOSFET. Datasheet pdf. Equivalent
Type Designator: VBZL60N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 35 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 155 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012(typ) Ohm
Package: TO263
VBZL60N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VBZL60N03 Datasheet (PDF)
vbzl60n03.pdf
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VBZL60N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURES TrenchFET Power MOSFETPRODUCT SUMMARY 100 % Rg and UIS TestedVDS 30V Compliant to RoHS Directive 2011/65/EURDS(on) VGS = 10 V 12mRDS(on) VGS = 4.5 V 19mAPPLICATIONSID 70 A OR-ing DConfiguration Single Server DC/DCD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE
vbzl60n06.pdf
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VBZL60N06www.VBsemi.comN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction Temperature TrenchFET Power MOSFETVDS 60VRDS(on) VGS = 10 V 11mRDS(on) VGS = 4.5 V 12 m75ID AConfiguration SingleDD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitV
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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