VBZL60N03 Datasheet and Replacement
Type Designator: VBZL60N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 155 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012(typ) Ohm
Package: TO263
VBZL60N03 Datasheet (PDF)
vbzl60n03.pdf

VBZL60N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURES TrenchFET Power MOSFETPRODUCT SUMMARY 100 % Rg and UIS TestedVDS 30V Compliant to RoHS Directive 2011/65/EURDS(on) VGS = 10 V 12mRDS(on) VGS = 4.5 V 19mAPPLICATIONSID 70 A OR-ing DConfiguration Single Server DC/DCD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE
vbzl60n06.pdf

VBZL60N06www.VBsemi.comN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction Temperature TrenchFET Power MOSFETVDS 60VRDS(on) VGS = 10 V 11mRDS(on) VGS = 4.5 V 12 m75ID AConfiguration SingleDD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitV
Datasheet: VBZFB80N03 , VBZJ12N06 , VBZL100N04 , VBZL120N08 , VBZL150N03 , VBZL30N06 , VBZL45N03 , VBZL50N06 , IRFP260 , VBZL60N06 , VBZL70N03 , VBZL80N03 , VBZL80N04 , VBZL80N06 , VBZL80N08 , VBZM100N03 , VBZM100N04 .
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