VBZL60N03 Specs and Replacement

Type Designator: VBZL60N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 155 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 typ Ohm

Package: TO263

VBZL60N03 substitution

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VBZL60N03 datasheet

 ..1. Size:893K  cn vbsemi
 vbzl60n03.pdf pdf_icon

VBZL60N03

VBZL60N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES TrenchFET Power MOSFET PRODUCT SUMMARY 100 % Rg and UIS Tested VDS 30 V Compliant to RoHS Directive 2011/65/EU RDS(on) VGS = 10 V 12 m RDS(on) VGS = 4.5 V 19 m APPLICATIONS ID 70 A OR-ing D Configuration Single Server DC/DC D2PAK (TO-263) G G D S S N-Channel MOSFET ABSOLUTE ... See More ⇒

 6.1. Size:1263K  cn vbsemi
 vbzl60n06.pdf pdf_icon

VBZL60N03

VBZL60N06 www.VBsemi.com N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature TrenchFET Power MOSFET VDS 60 V RDS(on) VGS = 10 V 11 m RDS(on) VGS = 4.5 V 12 m 75 ID A Configuration Single D D2PAK (TO-263) G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit V... See More ⇒

Detailed specifications: VBZFB80N03, VBZJ12N06, VBZL100N04, VBZL120N08, VBZL150N03, VBZL30N06, VBZL45N03, VBZL50N06, 2SK3878, VBZL60N06, VBZL70N03, VBZL80N03, VBZL80N04, VBZL80N06, VBZL80N08, VBZM100N03, VBZM100N04

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