All MOSFET. VBZL70N03 Datasheet

 

VBZL70N03 MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBZL70N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 43(max) nC
   trⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.260(typ) Ohm
   Package: TO263

 VBZL70N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBZL70N03 Datasheet (PDF)

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 vbzl70n03.pdf

VBZL70N03 VBZL70N03

VBZL70N03www.VBsemi.comN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS 200 VDefinitionRDS(on) VGS = 10 V 260 m Surface Mount370 Available in Tape and ReelRDS(on) VGS = 4.5 V m Dynamic dV/dt RatingID 10 A Repetitive Avalanche RatedConfiguration Single Fast Switching Ease of Paralleling

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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