VBZL70N03 Specs and Replacement

Type Designator: VBZL70N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 74 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 240 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.260 typ Ohm

Package: TO263

VBZL70N03 substitution

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VBZL70N03 datasheet

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VBZL70N03

VBZL70N03 www.VBsemi.com N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS 200 V Definition RDS(on) VGS = 10 V 260 m Surface Mount 370 Available in Tape and Reel RDS(on) VGS = 4.5 V m Dynamic dV/dt Rating ID 10 A Repetitive Avalanche Rated Configuration Single Fast Switching Ease of Paralleling ... See More ⇒

Detailed specifications: VBZL100N04, VBZL120N08, VBZL150N03, VBZL30N06, VBZL45N03, VBZL50N06, VBZL60N03, VBZL60N06, 2N7002, VBZL80N03, VBZL80N04, VBZL80N06, VBZL80N08, VBZM100N03, VBZM100N04, VBZM120N15, VBZM12P10

Keywords - VBZL70N03 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.