All MOSFET. FDC6320C Datasheet

 

FDC6320C MOSFET. Datasheet pdf. Equivalent

Type Designator: FDC6320C

Type of Transistor: MOSFET

Type of Control Channel: NP -Channel

Maximum Power Dissipation (Pd): 0.9 W

Maximum Drain-Source Voltage |Vds|: 25 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Drain Current |Id|: 0.22(0.12) A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 5(13) Ohm

Package: SSOT

FDC6320C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDC6320C Datasheet (PDF)

1.1. fdc6320c.pdf Size:106K _fairchild_semi

FDC6320C
FDC6320C

October 1997 FDC6320C Dual N & P Channel , Digital FET General Description Features These dual N & P Channel logic level enhancement mode field N-Ch 25 V, 0.22 A, RDS(ON) = 5 ? @ VGS= 2.7 V. effec transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density P-Ch 25 V, -0.12 A, RDS(ON) = 13 ? @ VGS= -2.7 V. process is especially tail

4.1. fdc6324l.pdf Size:68K _fairchild_semi

FDC6320C
FDC6320C

March 1999 FDC6324L Integrated Load Switch General Description Features These Integrated Load Switches are produced using Fairchild's VDROP=0.2V @ VIN=12V, IL=1A, VON/OFF=1.5 to 8V proprietary, high cell density, DMOS technology. This very high VDROP=0.3V @ VIN=5V, IL=1A, VON/OFF=1.5 to 8V. density process is especially tailored to minimize on-state High density cell design for extreme

4.2. fdc6329l.pdf Size:141K _fairchild_semi

FDC6320C
FDC6320C

November 1998 FDC6329L Integrated Load Switch General Description Features This device is particularly suited for compact power VDROP=0.2V @ VIN=5V, IL=2.8A. R(ON) = 0.07? VDROP=0.2V management in portable electronic equipment where @ VIN=2.5V, IL=1.9A. R(ON) = 0.105?. 2.5V to 8V input and 2.5A output current capability are needed. This load switch integrates a small N-Channel Control

4.3. fdc6327c.pdf Size:149K _fairchild_semi

FDC6320C
FDC6320C

July 2000 FDC6327C Dual N & P-Channel 2.5V Specified PowerTrenchTM MOSFET Features General Description These N & P-Channel 2.5V specified MOSFETs are N-Channel 2.7A, 20V. RDS(on) = 0.08? @ VGS = 4.5V produced using Fairchild Semiconductor's advanced RDS(on) = 0.12? @ VGS = 2.5V PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low ga

4.4. fdc6321c.pdf Size:130K _fairchild_semi

FDC6320C
FDC6320C

April 1999 FDC6321C Dual N & P Channel , Digital FET General Description Features These dual N & P Channel logic level enhancement mode N-Ch 25 V, 0.68 A, RDS(ON) = 0.45 ? @ VGS= 4.5 V field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very P-Ch -25 V, -0.46 A, RDS(ON) = 1.1 ? @ VGS= -4.5 V. high density process is especially ta

4.5. fdc6323l.pdf Size:121K _fairchild_semi

FDC6320C
FDC6320C

March 1999 FDC6323L Integrated Load Switch General Description Features VDROP=0.2V @ VIN=5V, IL=1A, VON/OFF= 1.5V to 8V These Integrated Load Switches are produced using VDROP=0.3V @ VIN=3.3V, IL=1A, VON/OFF= 1.5V to 8V. Fairchild's proprietary, high cell density, DMOS technology. This very high density process is High density cell design for extremely low on-resistance. especially ta

Datasheet: FDC602P , FDC604P , FDC606P , FDC608PZ , FDC610PZ , FDC6310P , FDC6312P , FDC6318P , IRF1404 , STU303S , FDC6321C , STU3030NLS , FDC6327C , STU17L01 , FDC6333C , STU16L01 , STU15N20 .

 


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