All MOSFET. VBZM20N10 Datasheet

 

VBZM20N10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBZM20N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 355 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 90 nC
   trⓘ - Rise Time: 220 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017(typ) Ohm
   Package: TO220AB

 VBZM20N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBZM20N10 Datasheet (PDF)

 ..1. Size:648K  cn vbsemi
 vbzm20n10.pdf

VBZM20N10 VBZM20N10

VBZM20N10www.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.017 at VGS = 10 V10070aCOMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGG D SSTop ViewN-Channel MOSFETABSOLUTE

 8.1. Size:720K  cn vbsemi
 vbzm20p06.pdf

VBZM20N10 VBZM20N10

VBZM20P06www.VBsemi.comP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARY FEATURES-60VDS V TrenchFET Power MOSFETRDS(on) VGS = 10 V 100 % UIS Tested62 mRDS(on) VGS = 4.5 V 74 mAPPLICATIONSID -40A Load SwitchConfiguration SingleSTO-220ABGDG D STop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Sy

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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