All MOSFET. VBZM20N10 Datasheet


VBZM20N10 MOSFET. Datasheet pdf. Equivalent

   Type Designator: VBZM20N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 355 W
   Maximum Drain-Source Voltage |Vds|: 100 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 70 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 90 nC
   Rise Time (tr): 220 nS
   Drain-Source Capacitance (Cd): 210 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.017(typ) Ohm
   Package: TO220AB

 VBZM20N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


VBZM20N10 Datasheet (PDF)

 ..1. Size:648K  cn vbsemi


VBZM20N10www.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.017 at VGS = 10 V10070aCOMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGG D SSTop ViewN-Channel MOSFETABSOLUTE

 8.1. Size:720K  cn vbsemi


VBZM20P06www.VBsemi.comP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARY FEATURES-60VDS V TrenchFET Power MOSFETRDS(on) VGS = 10 V 100 % UIS Tested62 mRDS(on) VGS = 4.5 V 74 mAPPLICATIONSID -40A Load SwitchConfiguration SingleSTO-220ABGDG D STop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Sy

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF540N , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .


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