All MOSFET. VBZM3710 Datasheet

 

VBZM3710 Datasheet and Replacement


   Type Designator: VBZM3710
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 127 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036(typ) Ohm
   Package: TO220AB
 

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VBZM3710 Datasheet (PDF)

 ..1. Size:1869K  cn vbsemi
 vbzm3710.pdf pdf_icon

VBZM3710

VBZM3710www.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSVDS (V) 100Available 175 C Junction TemperatureRDS(on) () at VGS = 10 V 0.036RoHS* Low Thermal Resistance PackageaCOMPLIANTID (A) 55 (Configuration SingleDTO-220AB GSG D STop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, u

 9.1. Size:1656K  cn vbsemi
 vbzm30n06.pdf pdf_icon

VBZM3710

VBZM30N06www.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Surface Mount0.024 at VGS = 10 V 50 Available in Tape and Reel600.028 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Directive 2002/95/EC

Datasheet: VBZM12P10 , VBZM13N50 , VBZM150N03 , VBZM150N10 , VBZM18N20 , VBZM20N10 , VBZM20P06 , VBZM30N06 , AON7506 , VBZM40N03 , VBZM40N10 , VBZM40P06 , VBZM4N20 , VBZM50N03 , VBZM50N06 , VBZM60N06 , VBZM60P03 .

History: STL22N65M5 | STL24N60M2 | 2SK4113 | FQAF9P25 | STD100N10F7 | SWB078R08ET | ME13N10A-G

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