VBZM3710 Specs and Replacement

Type Designator: VBZM3710

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 127 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 typ Ohm

Package: TO220AB

VBZM3710 substitution

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VBZM3710 datasheet

 ..1. Size:1869K  cn vbsemi
 vbzm3710.pdf pdf_icon

VBZM3710

VBZM3710 www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS VDS (V) 100 Available 175 C Junction Temperature RDS(on) ( ) at VGS = 10 V 0.036 RoHS* Low Thermal Resistance Package a COMPLIANT ID (A) 55 ( Configuration Single D TO-220AB G S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, u... See More ⇒

 9.1. Size:1656K  cn vbsemi
 vbzm30n06.pdf pdf_icon

VBZM3710

VBZM30N06 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Surface Mount 0.024 at VGS = 10 V 50 Available in Tape and Reel 60 0.028 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Directive 2002/95/EC... See More ⇒

Detailed specifications: VBZM12P10, VBZM13N50, VBZM150N03, VBZM150N10, VBZM18N20, VBZM20N10, VBZM20P06, VBZM30N06, IRFB3607, VBZM40N03, VBZM40N10, VBZM40P06, VBZM4N20, VBZM50N03, VBZM50N06, VBZM60N06, VBZM60P03

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.