All MOSFET. VBZM40N10 Datasheet

 

VBZM40N10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBZM40N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 370 W
   Maximum Drain-Source Voltage |Vds|: 100 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 120 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 76 nC
   Rise Time (tr): 22 nS
   Drain-Source Capacitance (Cd): 2025 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.005(typ) Ohm
   Package: TO220AB

 VBZM40N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBZM40N10 Datasheet (PDF)

 ..1. Size:1179K  cn vbsemi
vbzm40n10.pdf

VBZM40N10
VBZM40N10

VBZM40N10www.VBsemi.comN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY ThunderFET power MOSFETVDS (V) 100 Maximum 175 C junction temperatureRDS(on) () at VGS = 10 V 0.005a 100 % Rg and UIS testedID ( 120(A) Material categorization:Configuration Singlefor definitions of compliance please seeDTO-220ABGSSSDGN-Channel MOSFET

 7.1. Size:813K  cn vbsemi
vbzm40n03.pdf

VBZM40N10
VBZM40N10

VBZM40N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS (V)30 TrenchFET Power MOSFET 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.003 Compliant to RoHS Directive 2011/65/EURDS(on) () at VGS = 4.5 V 0.004ID (A) 120APPLICATIONSConfiguration Single OR-ingTO-220AB ServerD DC/DCGSG D S N-Channel MOSFET

 8.1. Size:895K  cn vbsemi
vbzm40p06.pdf

VBZM40N10
VBZM40N10

VBZM40P06www.VBsemi.comP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS -60 V TrenchFET Power MOSFETRDS(on) VGS = 10 V 19m 100 % UIS TestedRDS(on) VGS = 4.5 V m26APPLICATIONSID -50A Load SwitchConfiguration SingleTO-220ABSGDG D SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Paramete

 9.1. Size:744K  cn vbsemi
vbzm4n20.pdf

VBZM40N10
VBZM40N10

VBZM4N20www.VBsemi.comN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.110 at VGS = 10 V2 0 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTO-220ABAPPLICATIONS Primary Side SwitchDDRAIN connected to TAB GG D S Top ViewSN-Ch

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF540N , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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