All MOSFET. VBZM60P03 Datasheet

 

VBZM60P03 Datasheet and Replacement


   Type Designator: VBZM60P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 455 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008(typ) Ohm
   Package: TO220AB
 

 VBZM60P03 substitution

   - MOSFET ⓘ Cross-Reference Search

 

VBZM60P03 Datasheet (PDF)

 ..1. Size:936K  cn vbsemi
vbzm60p03.pdf pdf_icon

VBZM60P03

VBZM60P03www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS -30V TrenchFET Power MOSFETRDS(on) VGS = 10 V 8m 100 % Rg TestedRoHSRDS(on) VGS = 4.5 V 11mCOMPLIANT 100 % UIS TestedID -70AAPPLICATIONSConfiguration Single Load Switch Notebook Adaptor SwitchTO-220AB S G G D SD Top ViewP-C

 8.1. Size:846K  cn vbsemi
vbzm60n06.pdf pdf_icon

VBZM60P03

VBZM60N06www.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS 60V TrenchFET Power MOSFETRDS(on) VGS = 10 V 5 m Material categorization:ID 120AConfiguration SingleTO-220ABDGSN-Channel MOSFETG D SABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-So

 9.1. Size:825K  cn vbsemi
vbzm630.pdf pdf_icon

VBZM60P03

VBZM630www.VBsemi.comN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY DT-Trench Power MOSFETVDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature0.270 at VGS =10V10200 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchTO-220ABDGSN-Channel MOSFETG D STop ViewABSOLUTE MAXIMUM RAT

 9.2. Size:931K  cn vbsemi
vbzm630y.pdf pdf_icon

VBZM60P03

VBZM630Ywww.VBsemi.comN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSVDS (V) RDS(on) ( )ID (A) 175 C Junction TemperatureRoHS0.058at VGS =10V35200 COMPLIANT New Low Thermal Resistance Package Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-220AB IndustrialDGG D SSN-Channel MOSFETABSOLUTE MAXIMUM RA

Datasheet: VBZM3710 , VBZM40N03 , VBZM40N10 , VBZM40P06 , VBZM4N20 , VBZM50N03 , VBZM50N06 , VBZM60N06 , IRFZ24N , VBZM630 , VBZM630Y , VBZM75N03 , VBZM75N80 , VBZM75NF75 , VBZM80N03 , VBZM80N04 , VBZM80N06 .

History: NVTFS6H880N | SWB088R08E8T

Keywords - VBZM60P03 MOSFET datasheet

 VBZM60P03 cross reference
 VBZM60P03 equivalent finder
 VBZM60P03 lookup
 VBZM60P03 substitution
 VBZM60P03 replacement

 

 
Back to Top

 


 
.