All MOSFET. VBZP50N50S Datasheet

 

VBZP50N50S Datasheet and Replacement


   Type Designator: VBZP50N50S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 51 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: TO247AC
 

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VBZP50N50S Datasheet (PDF)

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VBZP50N50S

VBZP50N50S www.VBsemi.comN-Channel 500-V (D-S) Super Junction MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 500 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.240 Reduced switching and conduction lossesQg max. (nC) 66 Low gate charge (Qg)Qgs (nC) 8 Avalanche energy rated (UIS)Qgd (nC) 14Con

Datasheet: VBZMB18N50 , VBZMB18N65 , VBZMB20N65 , VBZMB20N65S , VBZMB2N65 , VBZMB4N65 , VBZMB7N65 , VBZMB8N60 , IRFZ48N , VBZQA120N03 , VBZQA50N03 , VBZQA50P03 , VBZQA80N03 , VBZQF50N03 , VBZQF50P03 , WNM2016-3 , WNM2020-3 .

History: NP90N04MDH | PP4B10BF | IPD122N10N3G | C2M120W280 | VBZMB13N50 | IRF7905 | C2M120W040

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