VBZP50N50S Specs and Replacement

Type Designator: VBZP50N50S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 51 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm

Package: TO247AC

VBZP50N50S substitution

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VBZP50N50S datasheet

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VBZP50N50S

VBZP50N50S www.VBsemi.com N-Channel 500-V (D-S) Super Junction MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 500 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.240 Reduced switching and conduction losses Qg max. (nC) 66 Low gate charge (Qg) Qgs (nC) 8 Avalanche energy rated (UIS) Qgd (nC) 14 Con... See More ⇒

Detailed specifications: VBZMB18N50, VBZMB18N65, VBZMB20N65, VBZMB20N65S, VBZMB2N65, VBZMB4N65, VBZMB7N65, VBZMB8N60, STP65NF06, VBZQA120N03, VBZQA50N03, VBZQA50P03, VBZQA80N03, VBZQF50N03, VBZQF50P03, WNM2016-3, WNM2020-3

Keywords - VBZP50N50S MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.