VBZP50N50S MOSFET. Datasheet pdf. Equivalent
Type Designator: VBZP50N50S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 14 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 66(max) nC
trⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 51 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
Package: TO247AC
VBZP50N50S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VBZP50N50S Datasheet (PDF)
..1. Size:852K cn vbsemi
vbzp50n50s.pdf
vbzp50n50s.pdf
VBZP50N50S www.VBsemi.comN-Channel 500-V (D-S) Super Junction MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 500 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.240 Reduced switching and conduction lossesQg max. (nC) 66 Low gate charge (Qg)Qgs (nC) 8 Avalanche energy rated (UIS)Qgd (nC) 14Con
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