All MOSFET. VBZQF50P03 Datasheet

 

VBZQF50P03 Datasheet and Replacement


   Type Designator: VBZQF50P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 13.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: DFN3X3EP
 

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VBZQF50P03 Datasheet (PDF)

 ..1. Size:1952K  cn vbsemi
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VBZQF50P03

VBZQF50P03www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESVVDS -30 TrenchFET power MOSFET 100 % Rg and UIS testedRDS(on),typ VGS=10V 9 mRDS(on),typ VGS=4.5V 17 mAPPLICATIONSAID -50 Notebook battery charging Notebook adapter switchDFN 3x3 EPS Bottom View Top View Top ViewG18 273645DPin 1P-Channel MOSFETABSOLUTE M

 7.1. Size:1989K  cn vbsemi
 vbzqf50n03.pdf pdf_icon

VBZQF50P03

VBZQF50N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURES30 VVDS Halogen-freeRDS(on),typ VGS=10V 13 m TrenchFET Power MOSFETRoHSRDS(on),typ VGS=4.5V 19 m 100 % Rg and UIS Tested COMPLIANT ID 50 AAPPLICATIONS DC/DC Conversion- Low-Side Switch Notebook PC GamingD DFN 3x3 EPTop View Bottom View Top View 1827G 36

Datasheet: VBZMB7N65 , VBZMB8N60 , VBZP50N50S , VBZQA120N03 , VBZQA50N03 , VBZQA50P03 , VBZQA80N03 , VBZQF50N03 , 60N06 , WNM2016-3 , WNM2020-3 , WPM2015-3-TR , WPM2341A-3-TR , XP132A1275SR , XP161A11A1PR , XP161A1355PR , XP202A0003PR .

History: IPP057N06N3 | BSC027N04LSG | NP50P06SDG | DMN2013UFDE | IXFT23N80Q

Keywords - VBZQF50P03 MOSFET datasheet

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