All MOSFET. VBZQF50P03 Datasheet

 

VBZQF50P03 Datasheet and Replacement


   Type Designator: VBZQF50P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 13.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: DFN3X3EP
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VBZQF50P03 Datasheet (PDF)

 ..1. Size:1952K  cn vbsemi
 vbzqf50p03.pdf pdf_icon

VBZQF50P03

VBZQF50P03www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESVVDS -30 TrenchFET power MOSFET 100 % Rg and UIS testedRDS(on),typ VGS=10V 9 mRDS(on),typ VGS=4.5V 17 mAPPLICATIONSAID -50 Notebook battery charging Notebook adapter switchDFN 3x3 EPS Bottom View Top View Top ViewG18 273645DPin 1P-Channel MOSFETABSOLUTE M

 7.1. Size:1989K  cn vbsemi
 vbzqf50n03.pdf pdf_icon

VBZQF50P03

VBZQF50N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURES30 VVDS Halogen-freeRDS(on),typ VGS=10V 13 m TrenchFET Power MOSFETRoHSRDS(on),typ VGS=4.5V 19 m 100 % Rg and UIS Tested COMPLIANT ID 50 AAPPLICATIONS DC/DC Conversion- Low-Side Switch Notebook PC GamingD DFN 3x3 EPTop View Bottom View Top View 1827G 36

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: H7N1002LM | AP6679GI-HF | FCPF7N60YDTU | SPD04N60S5 | DM12N65C | ZVN0124ASTOA

Keywords - VBZQF50P03 MOSFET datasheet

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