VBZQF50P03 Specs and Replacement

Type Designator: VBZQF50P03

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 13.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 370 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: DFN3X3EP

VBZQF50P03 substitution

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VBZQF50P03 datasheet

 ..1. Size:1952K  cn vbsemi
 vbzqf50p03.pdf pdf_icon

VBZQF50P03

VBZQF50P03 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES V VDS -30 TrenchFET power MOSFET 100 % Rg and UIS tested RDS(on),typ VGS=10V 9 m RDS(on),typ VGS=4.5V 17 m APPLICATIONS A ID -50 Notebook battery charging Notebook adapter switch DFN 3x3 EP S Bottom View Top View Top View G 1 8 2 7 3 6 4 5 D Pin 1 P-Channel MOSFET ABSOLUTE M... See More ⇒

 7.1. Size:1989K  cn vbsemi
 vbzqf50n03.pdf pdf_icon

VBZQF50P03

VBZQF50N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES 30 V VDS Halogen-free RDS(on),typ VGS=10V 13 m TrenchFET Power MOSFET RoHS RDS(on),typ VGS=4.5V 19 m 100 % Rg and UIS Tested COMPLIANT ID 50 A APPLICATIONS DC/DC Conversion - Low-Side Switch Notebook PC Gaming D DFN 3x3 EP Top View Bottom View Top View 1 8 2 7 G 3 6 ... See More ⇒

Detailed specifications: VBZMB7N65, VBZMB8N60, VBZP50N50S, VBZQA120N03, VBZQA50N03, VBZQA50P03, VBZQA80N03, VBZQF50N03, IRLB3034, WNM2016-3, WNM2020-3, WPM2015-3-TR, WPM2341A-3-TR, XP132A1275SR, XP161A11A1PR, XP161A1355PR, XP202A0003PR

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