NCE30H15 MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE30H15
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 150 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 38 nC
Rise Time (tr): 24 nS
Drain-Source Capacitance (Cd): 1135 pF
Maximum Drain-Source On-State Resistance (Rds): 0.003 Ohm
Package: TO220
NCE30H15 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE30H15 Datasheet (PDF)
nce30h15.pdf
Pb Free Producthttp://www.ncepower.com NCE30H15NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =150A RDS(ON)
nce30h15bg.pdf
http://www.ncepower.com NCE30H15BGNCE N-Channel Enhancement Mode Power MOSFETGeneral Features V =30V,I =150ADS DDescriptionR
nce30h15k.pdf
Pb Free Producthttp://www.ncepower.com NCE30H15KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =150A RDS(ON)
nce30h15b.pdf
Pb Free Producthttp://www.ncepower.comNCE30H15BNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30H15B uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =30V,I =150ADS DR
nce30h15bk.pdf
Pb Free Producthttp://www.ncepower.comNCE30H15BKNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30H15BK uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =30V,I =150ADS DR
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