NCE30H15 Datasheet and Replacement
Type Designator: NCE30H15
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 150 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 1135 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: TO220
NCE30H15 substitution
NCE30H15 Datasheet (PDF)
nce30h15.pdf

Pb Free Producthttp://www.ncepower.com NCE30H15NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =150A RDS(ON)
nce30h15bg.pdf

http://www.ncepower.com NCE30H15BGNCE N-Channel Enhancement Mode Power MOSFETGeneral Features V =30V,I =150ADS DDescriptionR
nce30h15k.pdf

Pb Free Producthttp://www.ncepower.com NCE30H15KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =150A RDS(ON)
nce30h15b.pdf

Pb Free Producthttp://www.ncepower.comNCE30H15BNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30H15B uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =30V,I =150ADS DR
Datasheet: NCE30D0808J , NCE30D2519K , NCE30H10AK , NCE30H10K , NCE30H11BK , NCE30H11K , NCE30H12 , NCE30H14K , STP65NF06 , NCE30H15K , NCE30H29D , NCE30ND07AS , NCE30ND07S , NCE30ND09S , NCE30NP07S , NCE30NP1812K , NCE30P12S .
Keywords - NCE30H15 MOSFET datasheet
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History: FS16VS-5 | TSF7N80M



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