NCE30P25S Datasheet and Replacement
Type Designator: NCE30P25S
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 486 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: SOP8
NCE30P25S substitution
NCE30P25S Datasheet (PDF)
nce30p25s.pdf
Pb Free Producthttp://www.ncepower.com NCE30P25SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P25S uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. General Features Schematic diagram VDS = -30V,ID = -25A RDS(ON)
nce30p25bq.pdf
http://www.ncepower.comNCE30P25BQNCE P-Channel Enhancement Mode Power MOSFETGeneral Features V = -30V,I = -25ADS DDescriptionR
nce30p25q.pdf
http://www.ncepower.com NCE30P25QNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P25Q uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = -30V,ID = -25A RDS(ON)
nce30p28q.pdf
http://www.ncepower.com NCE30P28QNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P28Q uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. Schematic diagram General Features VDS = -30V,ID = -28A RDS(ON)
Datasheet: NCE30ND07AS , NCE30ND07S , NCE30ND09S , NCE30NP07S , NCE30NP1812K , NCE30P12S , NCE30P15S , NCE30P20Q , AO4407A , NCE30P28Q , NCE30P30G , NCE30P30K , NCE30P50G , NCE3400 , NCE3400AY , NCE3400X , NCE3401 .
Keywords - NCE30P25S MOSFET datasheet
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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