FDC855N PDF and Equivalents Search

 

FDC855N Specs and Replacement

Type Designator: FDC855N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2 nS

Cossⓘ - Output Capacitance: 108 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm

Package: SSOT6

FDC855N substitution

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FDC855N datasheet

 ..1. Size:279K  fairchild semi
 fdc855n.pdf pdf_icon

FDC855N

January 2008 FDC855N tm Single N-Channel, Logic Level, PowerTrench MOSFET 30V, 6.1A, 27m Features General Description Max rDS(on) = 27m at VGS = 10V, ID = 6.1A This N-Channel Logic Level MOSFET is an efficient solution for low voltage and battery powered applications. Utilizing Fairchild Max rDS(on) = 36m at VGS = 4.5V, ID = 5.3A Semiconductor s advanced PowerTrench ... See More ⇒

Detailed specifications: FDC6401N , FDC6420C , STU15L01 , FDC642P , FDC642PF085 , FDC655BN , STU1530PL , FDC658AP , IRF9540N , STU12L01 , FDC8601 , STU10N25 , FDC8602 , STU10N20 , FDC86244 , FDD050N03B , STU10N10 .

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