All MOSFET. FDC855N Datasheet

 

FDC855N Datasheet and Replacement


   Type Designator: FDC855N
   Marking Code: .855
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 6.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 9.2 nC
   tr ⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 108 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: SSOT6
 

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FDC855N Datasheet (PDF)

 ..1. Size:279K  fairchild semi
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FDC855N

January 2008FDC855NtmSingle N-Channel, Logic Level, PowerTrench MOSFET 30V, 6.1A, 27mFeatures General Description Max rDS(on) = 27m at VGS = 10V, ID = 6.1A This N-Channel Logic Level MOSFET is an efficient solution for low voltage and battery powered applications. Utilizing Fairchild Max rDS(on) = 36m at VGS = 4.5V, ID = 5.3ASemiconductors advanced PowerTrench

Datasheet: FDC6401N , FDC6420C , STU15L01 , FDC642P , FDC642PF085 , FDC655BN , STU1530PL , FDC658AP , IRF4905 , STU12L01 , FDC8601 , STU10N25 , FDC8602 , STU10N20 , FDC86244 , FDD050N03B , STU10N10 .

History: IRLU3103

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