All MOSFET. NCE4801 Datasheet

 

NCE4801 MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE4801
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.5 nC
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
   Package: SOP8

 NCE4801 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE4801 Datasheet (PDF)

 ..1. Size:325K  ncepower
 nce4801.pdf

NCE4801 NCE4801

Pb Free Producthttp://www.ncepower.com NCE4801NCE P-Channel Enhancement Mode Power MOSFET Description The NCE4801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = -30V,ID = -5A

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: 2N7102

 

 
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