NCE7190A Specs and Replacement
Type Designator: NCE7190A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 170 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 71 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 380 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: TO220
NCE7190A substitution
- MOSFET ⓘ Cross-Reference Search
NCE7190A datasheet
nce7190a.pdf
Pb Free Product http //www.ncepower.com NCE7190A NCE N-Channel Enhancement Mode Power MOSFET Description The NCE7190A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =71V,ID =90A Schematic diagram RDS(ON) ... See More ⇒
Detailed specifications: NCE70T680D, NCE70T680, NCE70T680F, NCE70T900D, NCE70T900, NCE70T900F, NCE70T900I, NCE70T900K, BS170, NCE7560K, NCE80H12, NCE80H12D, NCE80H15, NCE80H16, NCE80T320D, NCE80T320, NCE80T320F
Keywords - NCE7190A MOSFET specs
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History: AON2707
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