All MOSFET. NCE7190A Datasheet

 

NCE7190A Datasheet and Replacement


   Type Designator: NCE7190A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 170 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 71 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 380 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO220
 

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NCE7190A Datasheet (PDF)

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NCE7190A

Pb Free Producthttp://www.ncepower.com NCE7190ANCE N-Channel Enhancement Mode Power MOSFET Description The NCE7190A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =71V,ID =90A Schematic diagram RDS(ON)

Datasheet: NCE70T680D , NCE70T680 , NCE70T680F , NCE70T900D , NCE70T900 , NCE70T900F , NCE70T900I , NCE70T900K , 18N50 , NCE7560K , NCE80H12 , NCE80H12D , NCE80H15 , NCE80H16 , NCE80T320D , NCE80T320 , NCE80T320F .

History: AP6680AGM | IPB120N08S4-03 | C3M0065100K | CS65N20-30 | IXFV110N10P | DMG8880LSS | SQM90142E

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