All MOSFET. NCE7190A Datasheet

 

NCE7190A MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE7190A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 170 W
   Maximum Drain-Source Voltage |Vds|: 71 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 90 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 100 nC
   Rise Time (tr): 11 nS
   Drain-Source Capacitance (Cd): 380 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0055 Ohm
   Package: TO220

 NCE7190A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE7190A Datasheet (PDF)

 ..1. Size:360K  ncepower
 nce7190a.pdf

NCE7190A NCE7190A

Pb Free Producthttp://www.ncepower.com NCE7190ANCE N-Channel Enhancement Mode Power MOSFET Description The NCE7190A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =71V,ID =90A Schematic diagram RDS(ON)

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