All MOSFET. FDD14AN06LA0_F085 Datasheet

 

FDD14AN06LA0_F085 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDD14AN06LA0_F085

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 50 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 32 nC

Maximum Drain-Source On-State Resistance (Rds): 0.0116 Ohm

Package: TO252 DPAK

FDD14AN06LA0_F085 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDD14AN06LA0_F085 Datasheet (PDF)

2.1. fdd14an06la0.pdf Size:224K _fairchild_semi

FDD14AN06LA0_F085
FDD14AN06LA0_F085

January 2004FDD14AN06LA0N-Channel PowerTrench MOSFET60V, 50A, 14.6mFeatures Applications rDS(ON) = 12.8m (Typ.), VGS = 5V, ID = 50A Motor / Body Load Control Qg(tot) = 25nC (Typ.), VGS = 5V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC

4.1. fdd14an06l f085.pdf Size:372K _fairchild_semi

FDD14AN06LA0_F085
FDD14AN06LA0_F085

December 2010FDD14AN06LA0_F085N-Channel PowerTrench MOSFET60V, 50A, 14.6mFeatures Applications rDS(ON) = 12.8m (Typ.), VGS = 5V, ID = 50A Motor / Body Load Control Qg(tot) = 25nC (Typ.), VGS = 5V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse)

 

Datasheet: FDD050N03B , STU10N10 , FDD10AN06A0 , FDD10N20LZ , STU10L01 , FDD120AN15A0 , FDD13AN06A0 , FDD13AN06A0_F085 , 2N7002 , FDD16AN08A0 , FDD16AN08A0_F085 , FDD18N20LZ , STU102S , FDD20AN06A0_F085 , FDD24AN06LA0_F085 , FDD2572 , FDD2572_F085 .

 

 
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