NCE8295AD Specs and Replacement
Type Designator: NCE8295AD
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 170 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 82 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 95 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 353 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO263
NCE8295AD substitution
- MOSFET ⓘ Cross-Reference Search
NCE8295AD datasheet
nce8295ag.pdf
http //www.ncepower.com NCE8295AG NCE N-Channel Enhancement Mode Power MOSFET Description General Features The NCE8295AG uses advanced trench technology and design V =82V,I =95A DS D to provide excellent R with low gate charge. This device is R ... See More ⇒
nce8295ai.pdf
Pb Free Product http //www.ncepower.com NCE8295AI NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295AI uses advanced trench technology and design to provide excellent R with low gate charge. This device is DS(ON) suitable for use in PWM, load switching and general purpose applications. Schematic diagram General Features V =82V,I =95A DS D R ... See More ⇒
Detailed specifications: NCE80T900, NCE80T900F, NCE8205, NCE8205A, NCE8205I, NCE8205t, NCE8290AC, NCE8295A, IRF1405, NCE8295AK, NCE82H110, NCE82H110D, NCE82H140D, NCE85H21, NCE85H21C, NCE8804, NCE9435
Keywords - NCE8295AD MOSFET specs
NCE8295AD cross reference
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