All MOSFET. STU09N25 Datasheet

 

STU09N25 Datasheet and Replacement


   Type Designator: STU09N25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Qg ⓘ - Total Gate Charge: 12.8 nC
   Cossⓘ - Output Capacitance: 58 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO252 DPAK
 

 STU09N25 substitution

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STU09N25 Datasheet (PDF)

 ..1. Size:127K  samhop
 stu09n25 std09n25.pdf pdf_icon

STU09N25

STU09N25GreenProductSTD09N25aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () MaxRugged and reliable.250V 7.5A 0.4 @ VGS=10VTO-252 and TO-251 Package.GSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I - PAKABSOLUTE MAXIM

Datasheet: FDD18N20LZ , STU102S , FDD20AN06A0F085 , FDD24AN06LA0F085 , FDD2572 , FDD2572F085 , FDD2582 , FDD2670 , 10N65 , FDD26AN06A0F085 , FDD306P , FDD3510H , STU06L01 , FDD3670 , STU04N20 , FDD3672 , STU03N20 .

History: 2SK2367

Keywords - STU09N25 MOSFET datasheet

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