STU09N25 MOSFET. Datasheet pdf. Equivalent
Type Designator: STU09N25
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 52 W
Maximum Drain-Source Voltage |Vds|: 250 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 7.5 A
Total Gate Charge (Qg): 39 nC
Drain-Source Capacitance (Cd): 58 pF
Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm
STU09N25 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STU09N25 Datasheet (PDF)
0.1. stu09n25 std09n25.pdf 
Size:127K _samhop
STU09N25GreenProductSTD09N25aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () MaxRugged and reliable.250V 7.5A 0.4 @ VGS=10VTO-252 and TO-251 Package.GSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I - PAKABSOLUTE MAXIM
Datasheet: FDD18N20LZ , STU102S , FDD20AN06A0_F085 , FDD24AN06LA0_F085 , FDD2572 , FDD2572_F085 , FDD2582 , FDD2670 , 2SK3568 , FDD26AN06A0_F085 , FDD306P , FDD3510H , STU06L01 , FDD3670 , STU04N20 , FDD3672 , STU03N20 .
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MOSFET: IPB17N25S3-100 | IPB160N04S4L-H1 | IPB140N08S4-04 | IPB120P04P4-04 | IPB120N08S4-04 | IPB120N08S4-03 | IPB120N04S4L-02 | IPB120N04S4-04 | IPB120N03S4L-03 | IPB110P06LM | IPB060N15N5 | IPB032N10N5 | IPB024N10N5 | IPB019N08N5 | IPB017N10N5LF | IPAW70R950CE