All MOSFET. FDD26AN06A0_F085 Datasheet

 

FDD26AN06A0_F085 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDD26AN06A0_F085

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 36 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 17 nC

Maximum Drain-Source On-State Resistance (Rds): 0.026 Ohm

Package: TO252, DPAK

FDD26AN06A0_F085 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDD26AN06A0_F085 Datasheet (PDF)

3.1. fdd26an06a0.pdf Size:606K _fairchild_semi

FDD26AN06A0_F085
FDD26AN06A0_F085

August 2004 FDD26AN06A0 N-Channel PowerTrench® MOSFET 60V, 36A, 26mΩ Features Applications • rDS(ON) = 20mΩ (Typ.), VGS = 10V, ID = 36A • Motor / Body Load Control • Qg(tot) = 13nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management • Low QRR Body Diode • Injection Systems • UIS Capability (Single Pulse and Repetitive Pulse) • DC-DC conv

5.1. fdd26an06 f085.pdf Size:871K _fairchild_semi

FDD26AN06A0_F085
FDD26AN06A0_F085

Aug 2011 FDD26AN06A0_F085 N-Channel PowerTrench® MOSFET 60V, 36A, 26mΩ Applications Features • Motor / Body Load Control • rDS(ON) = 20mΩ (Typ.), VGS = 10V, ID = 36A • ABS Systems • Qg(tot) = 13nC (Typ.), VGS = 10V • Powertrain Management • Low Miller Charge • Injection Systems • Low QRR Body Diode • DC-DC converters and Off-line UPS • UIS Capability (Si

 9.1. fdd2612.pdf Size:108K _fairchild_semi

FDD26AN06A0_F085
FDD26AN06A0_F085

August 2001 FDD2612    200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 4.9 A, 200 V. RDS(ON) = 720 mΩ @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional • High performance trench technology for extremely switching PWM controllers. It has be

9.2. fdd2670.pdf Size:95K _fairchild_semi

FDD26AN06A0_F085
FDD26AN06A0_F085

November 2001 FDD2670    200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 3.6 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional • Low gate charge switching PWM controllers. • Fast switching speed These MOSFETs

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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