All MOSFET. FDD26AN06A0_F085 Datasheet

 

FDD26AN06A0_F085 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDD26AN06A0_F085

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 36 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 17 nC

Maximum Drain-Source On-State Resistance (Rds): 0.026 Ohm

Package: TO252 DPAK

FDD26AN06A0_F085 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDD26AN06A0_F085 Datasheet (PDF)

3.1. fdd26an06a0.pdf Size:606K _fairchild_semi

FDD26AN06A0_F085
FDD26AN06A0_F085

August 2004FDD26AN06A0N-Channel PowerTrench MOSFET60V, 36A, 26mFeatures Applications rDS(ON) = 20m (Typ.), VGS = 10V, ID = 36A Motor / Body Load Control Qg(tot) = 13nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC conv

5.1. fdd26an06 f085.pdf Size:871K _fairchild_semi

FDD26AN06A0_F085
FDD26AN06A0_F085

Aug 2011FDD26AN06A0_F085N-Channel PowerTrench MOSFET60V, 36A, 26mApplicationsFeatures Motor / Body Load Control rDS(ON) = 20m (Typ.), VGS = 10V, ID = 36A ABS Systems Qg(tot) = 13nC (Typ.), VGS = 10V Powertrain Management Low Miller Charge Injection Systems Low QRR Body Diode DC-DC converters and Off-line UPS UIS Capability (Si

 9.1. fdd2612.pdf Size:108K _fairchild_semi

FDD26AN06A0_F085
FDD26AN06A0_F085

August 2001FDD2612200V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 4.9 A, 200 V. RDS(ON) = 720 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCconverters using either synchronous or conventional High performance trench technology for extremelyswitching PWM controllers. It has be

9.2. fdd2670.pdf Size:95K _fairchild_semi

FDD26AN06A0_F085
FDD26AN06A0_F085

November 2001FDD2670200V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 3.6 A, 200 V. RDS(ON) = 130 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCconverters using either synchronous or conventional Low gate chargeswitching PWM controllers. Fast switching speedThese MOSFETs

Datasheet: STU102S , FDD20AN06A0_F085 , FDD24AN06LA0_F085 , FDD2572 , FDD2572_F085 , FDD2582 , FDD2670 , STU09N25 , BF245C , FDD306P , FDD3510H , STU06L01 , FDD3670 , STU04N20 , FDD3672 , STU03N20 , FDD3672_F085 .

 

 
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