All MOSFET. FDD26AN06A0F085 Datasheet


FDD26AN06A0F085 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDD26AN06A0F085

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 36 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 17 nC

Maximum Drain-Source On-State Resistance (Rds): 0.026 Ohm

Package: TO252 DPAK

FDD26AN06A0F085 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


FDD26AN06A0F085 Datasheet (PDF)

3.1. fdd26an06a0.pdf Size:606K _fairchild_semi


August 2004FDD26AN06A0N-Channel PowerTrench MOSFET60V, 36A, 26mFeatures Applications rDS(ON) = 20m (Typ.), VGS = 10V, ID = 36A Motor / Body Load Control Qg(tot) = 13nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC conv

3.2. fdd26an06a0 f085.pdf Size:821K _onsemi


Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 5.1. fdd26an06 f085.pdf Size:871K _fairchild_semi


Aug 2011FDD26AN06A0_F085N-Channel PowerTrench MOSFET60V, 36A, 26mApplicationsFeatures Motor / Body Load Control rDS(ON) = 20m (Typ.), VGS = 10V, ID = 36A ABS Systems Qg(tot) = 13nC (Typ.), VGS = 10V Powertrain Management Low Miller Charge Injection Systems Low QRR Body Diode DC-DC converters and Off-line UPS UIS Capability (Si

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4435 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .


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