All MOSFET. FMW60N070S2HF Datasheet

 

FMW60N070S2HF Datasheet and Replacement


   Type Designator: FMW60N070S2HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 270 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 53.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO247
 

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FMW60N070S2HF Datasheet (PDF)

 ..1. Size:331K  inchange semiconductor
 fmw60n070s2hf.pdf pdf_icon

FMW60N070S2HF

isc N-Channel MOSFET Transistor FMW60N070S2HFFEATURESDrain Current : I = 53.2A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 70m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dri

 8.1. Size:231K  inchange semiconductor
 fmw60n190s2hf.pdf pdf_icon

FMW60N070S2HF

isc N-Channel MOSFET Transistor FMW60N190S2HFFEATURESWith low gate drive requirementsLow switching lossLow on-state resistanceEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sour

Datasheet: 2SK430L , 2SK430S , 2SK591 , 2SK736 , 2SK810 , 2SK811 , 2SK895 , 2SK896 , IRFP250 , 60NM60L-T3P , 60NM60L-T47 , 60NM60G-T3P , 60NM60G-T47 , ISC60NM60L , ISCD3NK80Z , ISCNH060D , FDN363N .

History: FHF2N65D | IPI120N10S4-03

Keywords - FMW60N070S2HF MOSFET datasheet

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