ISCD3NK80Z PDF and Equivalents Search

 

ISCD3NK80Z Specs and Replacement

Type Designator: ISCD3NK80Z

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 61 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm

Package: TO252

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ISCD3NK80Z datasheet

 ..1. Size:428K  inchange semiconductor
 iscd3nk80z.pdf pdf_icon

ISCD3NK80Z

isc N-Channel MOSFET Transistor ISCD3NK80Z FEATURES Drain Current I = 2.5A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 4.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ... See More ⇒

Detailed specifications: 2SK895, 2SK896, FMW60N070S2HF, 60NM60L-T3P, 60NM60L-T47, 60NM60G-T3P, 60NM60G-T47, ISC60NM60L, 4N60, ISCNH060D, FDN363N, ISCNH363N, ISCNH370W, ISCNH371D, ISCNH372B, ISCNH373F, ISCNH374D

Keywords - ISCD3NK80Z MOSFET specs

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