All MOSFET. ISCD3NK80Z Datasheet

 

ISCD3NK80Z Datasheet and Replacement


   Type Designator: ISCD3NK80Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 61 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
   Package: TO252
 

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ISCD3NK80Z Datasheet (PDF)

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ISCD3NK80Z

isc N-Channel MOSFET Transistor ISCD3NK80ZFEATURESDrain Current : I = 2.5A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 4.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

Datasheet: 2SK895 , 2SK896 , FMW60N070S2HF , 60NM60L-T3P , 60NM60L-T47 , 60NM60G-T3P , 60NM60G-T47 , ISC60NM60L , 4N60 , ISCNH060D , FDN363N , ISCNH363N , ISCNH370W , ISCNH371D , ISCNH372B , ISCNH373F , ISCNH374D .

History: RSU002P03

Keywords - ISCD3NK80Z MOSFET datasheet

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