All MOSFET. ISCD3NK80Z Datasheet

 

ISCD3NK80Z MOSFET. Datasheet pdf. Equivalent


   Type Designator: ISCD3NK80Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 2.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 24 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 61 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
   Package: TO252

 ISCD3NK80Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ISCD3NK80Z Datasheet (PDF)

 ..1. Size:428K  inchange semiconductor
 iscd3nk80z.pdf

ISCD3NK80Z ISCD3NK80Z

isc N-Channel MOSFET Transistor ISCD3NK80ZFEATURESDrain Current : I = 2.5A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 4.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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