ISH3N150 PDF and Equivalents Search

 

ISH3N150 Specs and Replacement

Type Designator: ISH3N150

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm

Package: TO3PB

ISH3N150 substitution

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ISH3N150 datasheet

 ..1. Size:255K  inchange semiconductor
 ish3n150.pdf pdf_icon

ISH3N150

isc N-Channel MOSFET Transistor ISH3N150 FEATURES Drain Current I = 3A@ T =25 D C Drain Source Voltage- V 1500V(Min) DSS Static Drain-Source On-Resistance R ... See More ⇒

Detailed specifications: ISCNH372B , ISCNH373F , ISCNH374D , ISCNH375W , ISCNH376L , ISCNH377B , ISCNH379P , ISF40NF20 , IRFZ24N , IXFY26N30X3 , IXFA26N30X3 , IXFP26N30X3 , MMD60R900QRH , STF23N80K5 , STF6N90K5 , SW3N90U , SWI3N90U .

Keywords - ISH3N150 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 


 
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