All MOSFET. ISH3N150 Datasheet

 

ISH3N150 Datasheet and Replacement


   Type Designator: ISH3N150
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm
   Package: TO3PB
 

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ISH3N150 Datasheet (PDF)

 ..1. Size:255K  inchange semiconductor
 ish3n150.pdf pdf_icon

ISH3N150

isc N-Channel MOSFET Transistor ISH3N150FEATURESDrain Current I = 3A@ T =25D CDrain Source Voltage- V 1500V(Min)DSS:Static Drain-Source On-Resistance R

Datasheet: ISCNH372B , ISCNH373F , ISCNH374D , ISCNH375W , ISCNH376L , ISCNH377B , ISCNH379P , ISF40NF20 , AON6380 , IXFY26N30X3 , IXFA26N30X3 , IXFP26N30X3 , MMD60R900QRH , STF23N80K5 , STF6N90K5 , SW3N90U , SWI3N90U .

History: BUZ103SL | NCEP026N10T

Keywords - ISH3N150 MOSFET datasheet

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