All MOSFET. SCT20N120 Datasheet

 

SCT20N120 Datasheet and Replacement


   Type Designator: SCT20N120
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 175 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 200 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.239 Ohm
   Package: HIP247
 

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SCT20N120 Datasheet (PDF)

 ..1. Size:493K  st
 sct20n120.pdf pdf_icon

SCT20N120

SCT20N120Silicon carbide Power MOSFET: 20 A, 1200 V, 189 m (typ., TJ=150 C), N-channel in a HiP247Datasheet - production dataFeatures Very tight variation of on-resistance vs. temperature Slight variation of switching losses vs. temperature Very high operating temperature capability 3(200 C)21 Very fast and robust intrinsic body diode Low ca

 9.1. Size:389K  rohm
 sct2080ke.pdf pdf_icon

SCT20N120

SCT2080KE N-channel SiC power MOSFET DatasheetlOutline TO-247VDSS1200V TO-247NRDS(on) (Typ.)80mID40AlFeatures lInner circuit1) Low on-resistance(1) Gate2) Fast switching speed(2) Drain3) Fast reverse recovery (3) Source4) Easy to parallel* Body Diode5) Simple to drive6) Pb-free lead plating ; RoHS compliantlPackaging specifications*1TO-247 TO-247N

Datasheet: MMD60R900QRH , STF23N80K5 , STF6N90K5 , SW3N90U , SWI3N90U , SWMI3N90U , SWD3N90U , SCT10N120 , IRF1405 , STB100N6F7 , STB10LN80K5 , STB15N65M5 , STB15NK50Z , STB15NK50Z-1 , STB17N80K5 , STB200NF04 , STB23N80K5 .

History: HM4402B | WML13N50C4 | IRL640PBF | IXTP230N04T4M | IRFS23N15DPBF | IXFP12N65X2 | IRF723FI

Keywords - SCT20N120 MOSFET datasheet

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