SCT20N120 MOSFET Datasheet: N-Ch, 1200V, 20A. Full specification with pinout and replacement list

SCT20N120 Specs and Replacement

Type Designator: SCT20N120

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 175 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 200 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.239 Ohm

Package: HIP247

SCT20N120 substitution

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SCT20N120 datasheet

..1. Size:493K st
sct20n120.pdf pdf_icon

SCT20N120 Silicon carbide Power MOSFET 20 A, 1200 V, 189 m (typ., TJ=150 C), N-channel in a HiP247 Datasheet - production data Features Very tight variation of on-resistance vs. temperature Slight variation of switching losses vs. temperature Very high operating temperature capability 3 (200 C) 2 1 Very fast and robust intrinsic body diode Low ca... See More ⇒

9.1. Size:389K rohm
sct2080ke.pdf pdf_icon

SCT2080KE N-channel SiC power MOSFET Datasheet lOutline TO-247 VDSS 1200V TO-247N RDS(on) (Typ.) 80m ID 40A lFeatures lInner circuit 1) Low on-resistance (1) Gate 2) Fast switching speed (2) Drain 3) Fast reverse recovery (3) Source 4) Easy to parallel * Body Diode 5) Simple to drive 6) Pb-free lead plating ; RoHS compliant lPackaging specifications*1 TO-247 TO-247N... See More ⇒

Detailed specifications: MMD60R900QRH, STF23N80K5, STF6N90K5, SW3N90U, SWI3N90U, SWMI3N90U, SWD3N90U, SCT10N120, IRF830, STB100N6F7, STB10LN80K5, STB15N65M5, STB15NK50Z, STB15NK50Z-1, STB17N80K5, STB200NF04, STB23N80K5