SCT20N120 Datasheet and Replacement
Type Designator: SCT20N120
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 175 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 200 °C
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 65 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.239 Ohm
Package: HIP247
SCT20N120 substitution
SCT20N120 Datasheet (PDF)
sct20n120.pdf
SCT20N120Silicon carbide Power MOSFET: 20 A, 1200 V, 189 m (typ., TJ=150 C), N-channel in a HiP247Datasheet - production dataFeatures Very tight variation of on-resistance vs. temperature Slight variation of switching losses vs. temperature Very high operating temperature capability 3(200 C)21 Very fast and robust intrinsic body diode Low ca
sct2080ke.pdf
SCT2080KE N-channel SiC power MOSFET DatasheetlOutline TO-247VDSS1200V TO-247NRDS(on) (Typ.)80mID40AlFeatures lInner circuit1) Low on-resistance(1) Gate2) Fast switching speed(2) Drain3) Fast reverse recovery (3) Source4) Easy to parallel* Body Diode5) Simple to drive6) Pb-free lead plating ; RoHS compliantlPackaging specifications*1TO-247 TO-247N
Datasheet: MMD60R900QRH , STF23N80K5 , STF6N90K5 , SW3N90U , SWI3N90U , SWMI3N90U , SWD3N90U , SCT10N120 , IRF830 , STB100N6F7 , STB10LN80K5 , STB15N65M5 , STB15NK50Z , STB15NK50Z-1 , STB17N80K5 , STB200NF04 , STB23N80K5 .
History: APM4410 | LN2324DT2AG | S-LBSS8402DW1T1G | AP20T15GM | JMSH1004BG | SW1N60A | IRF7341I
Keywords - SCT20N120 MOSFET datasheet
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: APM4410 | LN2324DT2AG | S-LBSS8402DW1T1G | AP20T15GM | JMSH1004BG | SW1N60A | IRF7341I
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