STB17N80K5 Datasheet and Replacement
Type Designator: STB17N80K5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 170 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10.8 nS
Cossⓘ - Output Capacitance: 64 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.34 Ohm
Package: TO263
STB17N80K5 substitution
STB17N80K5 Datasheet (PDF)
stb17n80k5.pdf
STB17N80K5 N-channel 800 V, 0.29 typ., 14 A MDmesh K5 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) DTABSTB17N80K5 800 V 0.34 14 A 2 Industrys lowest RDS(on) x area 3 Industrys best FoM (figure of merit) 1 Ultra-low gate charge 100% avalanche tested DPAK Zener-protected
stb170nf04.pdf
STB170NF04N-channel 40 V, 4.4 m, 80 A, D2PAKSTripFET II Power MOSFETFeatures VDSS RDS(on) ID PTOTTypeSTB170NF04 40 V
Datasheet: SWD3N90U , SCT10N120 , SCT20N120 , STB100N6F7 , STB10LN80K5 , STB15N65M5 , STB15NK50Z , STB15NK50Z-1 , 2SK3918 , STB200NF04 , STB23N80K5 , STB28N60DM2 , STB33N60DM2 , STB35N60DM2 , STB37N60DM2AG , STB45N30M5 , STB47N50DM6AG .
History: VN1210N1 | SFG100N10GF | NTD5865NLT4G | STB9NK60ZD
Keywords - STB17N80K5 MOSFET datasheet
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History: VN1210N1 | SFG100N10GF | NTD5865NLT4G | STB9NK60ZD
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