STB17N80K5 Specs and Replacement
Type Designator: STB17N80K5
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 170 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10.8 nS
Cossⓘ - Output Capacitance: 64 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.34 Ohm
Package: TO263
STB17N80K5 substitution
- MOSFET ⓘ Cross-Reference Search
STB17N80K5 datasheet
stb17n80k5.pdf
STB17N80K5 N-channel 800 V, 0.29 typ., 14 A MDmesh K5 Power MOSFET in a D PAK package Datasheet - production data Features Order code V R max. I DS DS(on) D TAB STB17N80K5 800 V 0.34 14 A 2 Industry s lowest RDS(on) x area 3 Industry s best FoM (figure of merit) 1 Ultra-low gate charge 100% avalanche tested D PAK Zener-protected ... See More ⇒
stb170nf04.pdf
STB170NF04 N-channel 40 V, 4.4 m , 80 A, D2PAK STripFET II Power MOSFET Features VDSS RDS(on) ID PTOT Type STB170NF04 40 V ... See More ⇒
Detailed specifications: SWD3N90U, SCT10N120, SCT20N120, STB100N6F7, STB10LN80K5, STB15N65M5, STB15NK50Z, STB15NK50Z-1, EMB04N03H, STB200NF04, STB23N80K5, STB28N60DM2, STB33N60DM2, STB35N60DM2, STB37N60DM2AG, STB45N30M5, STB47N50DM6AG
Keywords - STB17N80K5 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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