STB37N60DM2AG PDF and Equivalents Search

 

STB37N60DM2AG Specs and Replacement

Type Designator: STB37N60DM2AG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 210 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: TO263

STB37N60DM2AG substitution

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STB37N60DM2AG datasheet

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 stb37n60dm2ag.pdf pdf_icon

STB37N60DM2AG

STB37N60DM2AG Automotive-grade N-channel 600 V, 0.094 typ., 28 A MDmesh DM2 Power MOSFET in a D PAK package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT TAB STB37N60DM2AG 600 V 0.110 28 A 210 W Designed for automotive applications and 3 AEC-Q101 qualified 1 Fast-recovery body diode Extremely low gate charge and input capa... See More ⇒

Detailed specifications: STB15NK50Z, STB15NK50Z-1, STB17N80K5, STB200NF04, STB23N80K5, STB28N60DM2, STB33N60DM2, STB35N60DM2, IRFP064N, STB45N30M5, STB47N50DM6AG, STB55NF06-1, STB80NF55-06, STB90NF03L-1, STB9NK70Z, STD10LN80K5, STD12N60DM2AG

Keywords - STB37N60DM2AG MOSFET specs

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