STB47N50DM6AG PDF and Equivalents Search

 

STB47N50DM6AG Specs and Replacement

Type Designator: STB47N50DM6AG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 38 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.4 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.071 Ohm

Package: TO263

STB47N50DM6AG substitution

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STB47N50DM6AG datasheet

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 stb47n50dm6ag.pdf pdf_icon

STB47N50DM6AG

STB47N50DM6AG Datasheet Automotive-grade N-channel 500 V, 61 m typ., 38 A MDmesh DM6 Power MOSFET in a D PAK package Features TAB VDS RDS(on) max. ID Order code STB47N50DM6AG 500 V 71 m 38 A 2 3 1 AEC-Q101 qualified D PAK Fast-recovery body diode Lower RDS(on) per area vs previous generation Low gate charge, input capacitance and resistance D(2, TAB)... See More ⇒

Detailed specifications: STB17N80K5, STB200NF04, STB23N80K5, STB28N60DM2, STB33N60DM2, STB35N60DM2, STB37N60DM2AG, STB45N30M5, IRF730, STB55NF06-1, STB80NF55-06, STB90NF03L-1, STB9NK70Z, STD10LN80K5, STD12N60DM2AG, STD13N50DM2AG, STD13N60DM2

Keywords - STB47N50DM6AG MOSFET specs

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