All MOSFET. STB47N50DM6AG Datasheet

 

STB47N50DM6AG Datasheet and Replacement


   Type Designator: STB47N50DM6AG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 38 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.4 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.071 Ohm
   Package: TO263
 

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STB47N50DM6AG Datasheet (PDF)

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STB47N50DM6AG

STB47N50DM6AGDatasheetAutomotive-grade N-channel 500 V, 61 m typ., 38 A MDmesh DM6 Power MOSFET in a DPAK packageFeaturesTABVDS RDS(on) max. IDOrder codeSTB47N50DM6AG 500 V 71 m 38 A231 AEC-Q101 qualified DPAK Fast-recovery body diode Lower RDS(on) per area vs previous generation Low gate charge, input capacitance and resistanceD(2, TAB)

Datasheet: STB17N80K5 , STB200NF04 , STB23N80K5 , STB28N60DM2 , STB33N60DM2 , STB35N60DM2 , STB37N60DM2AG , STB45N30M5 , BS170 , STB55NF06-1 , STB80NF55-06 , STB90NF03L-1 , STB9NK70Z , STD10LN80K5 , STD12N60DM2AG , STD13N50DM2AG , STD13N60DM2 .

History: IPN60R600P7S

Keywords - STB47N50DM6AG MOSFET datasheet

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