STB47N50DM6AG MOSFET. Datasheet pdf. Equivalent
Type Designator: STB47N50DM6AG
Marking Code: 47N50DM6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 38 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 57 nC
trⓘ - Rise Time: 5.4 nS
Cossⓘ - Output Capacitance: 140 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.071 Ohm
Package: TO263
STB47N50DM6AG Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STB47N50DM6AG Datasheet (PDF)
..1. Size:412K st
stb47n50dm6ag.pdf
stb47n50dm6ag.pdf
STB47N50DM6AGDatasheetAutomotive-grade N-channel 500 V, 61 m typ., 38 A MDmesh DM6 Power MOSFET in a DPAK packageFeaturesTABVDS RDS(on) max. IDOrder codeSTB47N50DM6AG 500 V 71 m 38 A231 AEC-Q101 qualified DPAK Fast-recovery body diode Lower RDS(on) per area vs previous generation Low gate charge, input capacitance and resistanceD(2, TAB)
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