STD15N50M2AG
MOSFET. Datasheet pdf. Equivalent
Type Designator: STD15N50M2AG
Marking Code: 15N50M2
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 85
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 13
nC
trⓘ - Rise Time: 3.2
nS
Cossⓘ -
Output Capacitance: 33
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38
Ohm
Package:
TO252
STD15N50M2AG
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STD15N50M2AG
Datasheet (PDF)
..1. Size:788K st
std15n50m2ag.pdf 
STD15N50M2AG Automotive-grade N-channel 500 V, 0.336 typ., 10 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features R DS(on)Order code V I P DS D TOTmax. STD15N50M2AG 500 V 0.380 10 A 85 W Designed for automotive applications and AEC-Q101 qualified Extremely low gate charge Excellent output capacitance (C ) profile OSS
8.3. Size:331K st
std15nf10.pdf
STD15NF10N-channel 100 V, 0.060 , 23 A, DPAKlow gate charge STripFET II Power MOSFETFeaturesVDSSS RDS(on) max IDTypeSTD15NF10 100 V
8.4. Size:868K st
stb15n65m5 std15n65m5.pdf
STB15N65M5, STD15N65M5DatasheetN-channel 650 V, 0.308 typ., 11 A MDmesh M5 Power MOSFETs in D2PAK and DPAK packagesFeaturesTABTABVDS @RDS(on) max. IDOrder codeTJmax32213STB15N65M51710 V 0.34 11 AD2PAK DPAKSTD15N65M5 Extremely low RDS(on)D(2, TAB) Low gate charge and input capacitance Excellent switching performance 100% aval
8.5. Size:168K st
std15n06-.pdf
STD15N06N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD15N06 60 V
8.6. Size:329K st
std15nf10t4.pdf
STD15NF10N-channel 100 V, 0.060 , 23 A, DPAKlow gate charge STripFET II Power MOSFETFeaturesVDSSS RDS(on) max IDTypeSTD15NF10 100 V
8.7. Size:1087K st
std15n65m5.pdf
STB15N65M5, STD15N65M5N-channel 650 V, 0.308 typ., 11 A MDmesh V Power MOSFET in D2PAK and DPAK packagesDatasheet production dataFeaturesVDS @ RDS(on) Order codes IDTJmax maxTABSTB15N65M5TAB710 V
8.8. Size:140K st
std15n.pdf
STD15N06LN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD15N06L 60 V
8.9. Size:148K samhop
stu15n20 std15n20.pdf
STU15N20GreenProductSTD15N20aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.200V 15A 190 @ VGS=10VTO-252 and TO-251 Package.GSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I - PAKAB
8.10. Size:208K inchange semiconductor
std15nf10t4.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STD15NF10T4FEATURESWith To-252(DPAK) packageApplication oriented characterizationExcellent switching performance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
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