STD4LN80K5 Datasheet and Replacement
Type Designator: STD4LN80K5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 11 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
Package: TO252
- MOSFET Cross-Reference Search
STD4LN80K5 Datasheet (PDF)
std4ln80k5.pdf

STD4LN80K5 N-channel 800 V, 2.1 typ., 3 A MDmesh K5 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) DSTD4LN80K5 800 V 2.6 3 A Industrys lowest R x area DS(on) Industrys best figure of merit (FoM) DPAK Ultra low gate charge 100% avalanche tested Zener-protected Figure 1: Internal s
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 20N03L-TO252 | 2N6762JTXV
Keywords - STD4LN80K5 MOSFET datasheet
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History: 20N03L-TO252 | 2N6762JTXV



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