STD4LN80K5 MOSFET. Datasheet pdf. Equivalent
Type Designator: STD4LN80K5
Marking Code: 4LN80K5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 3.7 nC
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 11 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
Package: TO252
STD4LN80K5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STD4LN80K5 Datasheet (PDF)
..1. Size:809K st
std4ln80k5.pdf
std4ln80k5.pdf
STD4LN80K5 N-channel 800 V, 2.1 typ., 3 A MDmesh K5 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) DSTD4LN80K5 800 V 2.6 3 A Industrys lowest R x area DS(on) Industrys best figure of merit (FoM) DPAK Ultra low gate charge 100% avalanche tested Zener-protected Figure 1: Internal s
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