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STD64N4F6AG Datasheet and Replacement


   Type Designator: STD64N4F6AG
   Marking Code: 64N4F6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 54 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 44 nC
   tr ⓘ - Rise Time: 113 nS
   Cossⓘ - Output Capacitance: 232 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm
   Package: TO252
 

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STD64N4F6AG Datasheet (PDF)

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STD64N4F6AG

STD64N4F6AG Automotive-grade N-channel 40 V, 7 m typ., 54 A STripFET F6 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTD64N4F6AG 40 V 8.2 m 54 A 60 W Designed for automotive applications and AEC-Q101 qualified Very low on-resistance Very low gate charge High avalanche ruggedness Figure

Datasheet: STD13N50DM2AG , STD13N60DM2 , STD15N50M2AG , STD20NF06L-1 , STQ2HNK60Z-AP , STD4LN80K5 , STD4N90K5 , STD5N60DM2 , IRFP260N , STD7LN80K5 , STD8N60DM2 , STF11N60M2-EP , STF11N65M2-045Y , STF13N60DM2 , STF140N6F7 , STF15N60M2-EP , STF16N60M6 .

Keywords - STD64N4F6AG MOSFET datasheet

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