STF8N60DM2 MOSFET Datasheet: N-Ch, 600V, 8A. Full specification with pinout and replacement list

STF8N60DM2 Specs and Replacement

Type Designator: STF8N60DM2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 24 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO220F

STF8N60DM2 substitution

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STF8N60DM2 datasheet

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STF8N60DM2 N-channel 600 V, 550 m typ., 8 A MDmesh DM2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STF8N60DM2 600 V 600 m 8 A 25 W Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness ... See More ⇒

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stb8n65m5 std8n65m5 stf8n65m5 sti8n65m5 stp8n65m5 stu8n65m5.pdf pdf_icon

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8.3. Size:201K inchange semiconductor
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INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STF8N65M5 FEATURES Excellent switching performance Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS V Gate-... See More ⇒

Detailed specifications: STF26N65DM2, STF28N60DM2, STF33N60DM6, STF3LN80K5, STF5N80K5, STF5NK52ZD, STF7LN80K5, STF7N90K5, IRLB4132, STF9N80K5, STFH18N60M2, STFI11NM65N, STFI13N95K3, STFI15N60M2-EP, STFI9N60M2, STFI9N80K5, STFU10N80K5