All MOSFET. STFH18N60M2 Datasheet

 

STFH18N60M2 Datasheet and Replacement


   Type Designator: STFH18N60M2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO220F
 

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STFH18N60M2 Datasheet (PDF)

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STFH18N60M2

STFH18N60M2DatasheetN-channel 600 V, 0.255 typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP wide creepage packageFeaturesVDS @TJmax RDS(on) max. IDOrder codeSTFH18N60M2 650 V 0.280 13 A Extremely low gate charge Excellent output capacitance (COSS) profileTO-220 FP wide creepage 100% avalanche testedD(2) Zener-protected Wide distance of 4.25 mm bet

Datasheet: STF33N60DM6 , STF3LN80K5 , STF5N80K5 , STF5NK52ZD , STF7LN80K5 , STF7N90K5 , STF8N60DM2 , STF9N80K5 , SPP20N60C3 , STFI11NM65N , STFI13N95K3 , STFI15N60M2-EP , STFI9N60M2 , STFI9N80K5 , STFU10N80K5 , STFU15N80K5 , STFU16N65M2 .

History: AO3456 | MMBFJ175 | SIHD4N80E | IPC100N04S5L-2R6

Keywords - STFH18N60M2 MOSFET datasheet

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