All MOSFET. STFH18N60M2 Datasheet

 

STFH18N60M2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STFH18N60M2
   Marking Code: 18N60M2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 21.5 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO220F

 STFH18N60M2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STFH18N60M2 Datasheet (PDF)

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 stfh18n60m2.pdf

STFH18N60M2 STFH18N60M2

STFH18N60M2DatasheetN-channel 600 V, 0.255 typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP wide creepage packageFeaturesVDS @TJmax RDS(on) max. IDOrder codeSTFH18N60M2 650 V 0.280 13 A Extremely low gate charge Excellent output capacitance (COSS) profileTO-220 FP wide creepage 100% avalanche testedD(2) Zener-protected Wide distance of 4.25 mm bet

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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