STFI9N80K5 MOSFET Datasheet: N-Ch, 800V, 7A. Full specification with pinout and replacement list

STFI9N80K5 Specs and Replacement

Type Designator: STFI9N80K5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.7 nS

Cossⓘ - Output Capacitance: 37 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: I2PAKFP

STFI9N80K5 substitution

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STFI9N80K5 datasheet

..1. Size:756K st
stf9n80k5 stfi9n80k5.pdf pdf_icon

STF9N80K5, STFI9N80K5 N-channel 800 V, 0.73 typ., 7 A MDmesh K5 Power MOSFETs in TO-220FP and I PAKFP packages Datasheet - production data Features Order code V R max. I DS DS(on) D STF9N80K5 800 V 0.90 7 A STFI9N80K5 TO-220FP I2PAKFP (TO-281) Industry s lowest RDS(on) x area Industry s best figure of merit (FoM) Ultra-low gate cha... See More ⇒

8.1. Size:879K st
stf9n60m2 stfi9n60m2.pdf pdf_icon

STF9N60M2, STFI9N60M2 N-channel 600 V, 0.72 typ., 5.5 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP and I2PAKFP packages Datasheet - production data Features VDS @ RDS(on) Order codes ID TJmax max STF9N60M2 650 V 0.78 5.5 A STFI9N60M2 Extremely low gate charge 3 2 1 2 1 3 Lower RDS(on) x area vs previous generation TO-220FP I2PAKFP (TO-281) Low ... See More ⇒

Detailed specifications: STF7N90K5, STF8N60DM2, STF9N80K5, STFH18N60M2, STFI11NM65N, STFI13N95K3, STFI15N60M2-EP, STFI9N60M2, K4145, STFU10N80K5, STFU15N80K5, STFU16N65M2, STFU18N65M2, STFU23N80K5, STFU9N65M2, STH15810-2, STH410N4F7-2AG