STFU9N65M2 Specs and Replacement
Type Designator: STFU9N65M2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6.6 nS
Cossⓘ - Output Capacitance: 18 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: TO220F
STFU9N65M2 substitution
- MOSFET ⓘ Cross-Reference Search
STFU9N65M2 datasheet
stfu9n65m2.pdf
STFU9N65M2 Datasheet N-channel 650 V, 0.79 typ., 5 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Features VDS RDS(on) max. ID Order code STFU9N65M2 650 V 0.90 5 A Extremely low gate charge 3 Excellent output capacitance (COSS) profile 2 1 100% avalanche tested TO-220FP Zener-protected ultra narrow leads D(2) Applications Switching... See More ⇒
Detailed specifications: STFI15N60M2-EP, STFI9N60M2, STFI9N80K5, STFU10N80K5, STFU15N80K5, STFU16N65M2, STFU18N65M2, STFU23N80K5, IRFB3607, STH15810-2, STH410N4F7-2AG, STH410N4F7-6AG, STH6N95K5-2, STI100N10F7, STI14NM50N, STI28N60M2, STI34N65M5
Keywords - STFU9N65M2 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: CS12N60FA9R | NTD5867NL-1G
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