STFU9N65M2 MOSFET. Datasheet pdf. Equivalent
Type Designator: STFU9N65M2
Marking Code: 9N65M2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10.3 nC
trⓘ - Rise Time: 6.6 nS
Cossⓘ - Output Capacitance: 18 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: TO220F
STFU9N65M2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STFU9N65M2 Datasheet (PDF)
stfu9n65m2.pdf
STFU9N65M2DatasheetN-channel 650 V, 0.79 typ., 5 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads packageFeaturesVDS RDS(on) max. IDOrder codeSTFU9N65M2 650 V 0.90 5 A Extremely low gate charge3 Excellent output capacitance (COSS) profile21 100% avalanche testedTO-220FP Zener-protectedultra narrow leadsD(2)Applications Switching
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: HM50N03 | 8N80L-TF3-T | SVD730F | SVF18NE50PN | OSG65R650FZF
History: HM50N03 | 8N80L-TF3-T | SVD730F | SVF18NE50PN | OSG65R650FZF
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