All MOSFET. STH410N4F7-2AG Datasheet

 

STH410N4F7-2AG MOSFET. Datasheet pdf. Equivalent


   Type Designator: STH410N4F7-2AG
   Marking Code: 410N4F7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 365 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 200 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 141 nC
   trⓘ - Rise Time: 198 nS
   Cossⓘ - Output Capacitance: 3500 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0011 Ohm
   Package: H2PAK-2

 STH410N4F7-2AG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STH410N4F7-2AG Datasheet (PDF)

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 sth410n4f7-2ag sth410n4f7-6ag.pdf

STH410N4F7-2AG STH410N4F7-2AG

STH410N4F7-2AG, STH410N4F7-6AG Automotive-grade N-channel 40 V, 0.8 m typ., 200 A STripFET F7 Power MOSFETs in HPAK-2 and HPAK-6 packages Datasheet - production data Features R DS(on)Order code VDS ID PTOT max. STH410N4F7-2AG 40 V 1.1 m 200 A 365 W STH410N4F7-6AG Designed for automotive applications and AEC-Q101 qualified Among the lowest RDS(on)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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