STH6N95K5-2 Datasheet and Replacement
Type Designator: STH6N95K5-2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 950 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 30 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm
Package: H2PAK-2
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STH6N95K5-2 Datasheet (PDF)
sth6n95k5-2.pdf
STH6N95K5-2 N-channel 950 V, 1 typ., 6 A MDmesh K5 Power MOSFET in a HPAK-2 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTH6N95K5-2 950 V 1.25 6 A 110 W Industrys lowest R x area DS(on) Industrys best figure of merit (FoM) Ultra low gate charge 100% avalanche tested Zener-protected Applicati
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History: QM3007J | AON6794 | IRFHM792PBF | BUZ84 | MTC4503LQ8 | CED05N8 | BL10N70-A
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History: QM3007J | AON6794 | IRFHM792PBF | BUZ84 | MTC4503LQ8 | CED05N8 | BL10N70-A
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