STH6N95K5-2 PDF and Equivalents Search

 

STH6N95K5-2 Specs and Replacement

Type Designator: STH6N95K5-2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 950 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm

Package: H2PAK-2

STH6N95K5-2 substitution

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STH6N95K5-2 datasheet

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sth6n95k5-2.pdf pdf_icon

STH6N95K5-2

STH6N95K5-2 N-channel 950 V, 1 typ., 6 A MDmesh K5 Power MOSFET in a H PAK-2 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STH6N95K5-2 950 V 1.25 6 A 110 W Industry s lowest R x area DS(on) Industry s best figure of merit (FoM) Ultra low gate charge 100% avalanche tested Zener-protected Applicati... See More ⇒

 9.1. Size:346K  1
sth6na80 sth6na80fi.pdf pdf_icon

STH6N95K5-2

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sth6n100.pdf pdf_icon

STH6N95K5-2

STH6N100 STH6N100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STH6N100 1000 V ... See More ⇒

Detailed specifications: STFU15N80K5, STFU16N65M2, STFU18N65M2, STFU23N80K5, STFU9N65M2, STH15810-2, STH410N4F7-2AG, STH410N4F7-6AG, NCEP15T14, STI100N10F7, STI14NM50N, STI28N60M2, STI34N65M5, STI6N95K5, STL10N65M2, STL130N6F7, STL140N6F7

Keywords - STH6N95K5-2 MOSFET specs

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