STH6N95K5-2 MOSFET. Datasheet pdf. Equivalent

   Type Designator: STH6N95K5-2
   Marking Code: 6N95K5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 950 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm
   Package: H2PAK-2

STH6N95K5-2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

STH6N95K5-2 Datasheet (PDF)

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sth6n95k5-2.pdf

STH6N95K5-2 N-channel 950 V, 1 typ., 6 A MDmesh K5 Power MOSFET in a HPAK-2 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTH6N95K5-2 950 V 1.25 6 A 110 W Industrys lowest R x area DS(on) Industrys best figure of merit (FoM) Ultra low gate charge 100% avalanche tested Zener-protected Applicati

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