STI34N65M5 MOSFET. Datasheet pdf. Equivalent
Type Designator: STI34N65M5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 190 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 28 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 8.7 nS
Cossⓘ - Output Capacitance: 75 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: TO262
STI34N65M5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STI34N65M5 Datasheet (PDF)
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stb34n65m5 sti34n65m5 stp34n65m5 stw34n65m5.pdf
stb34n65m5 sti34n65m5 stp34n65m5 stw34n65m5.pdf
STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5N-channel 650 V, 0.09 typ., 28 A MDmesh V Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeatures TABTABOrder codes VDS @ TJmax RDS(on) max ID231321STB34N65M5D2PAKI2PAKSTI34N65M5710 V 0.11 28 ATABSTP34N65M5STW34N65M5 Worldwide best RDS(on) * area332
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
