All MOSFET. STI34N65M5 Datasheet

 

STI34N65M5 Datasheet and Replacement


   Type Designator: STI34N65M5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 28 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8.7 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: TO262
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STI34N65M5 Datasheet (PDF)

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STI34N65M5

STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5N-channel 650 V, 0.09 typ., 28 A MDmesh V Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeatures TABTABOrder codes VDS @ TJmax RDS(on) max ID231321STB34N65M5D2PAKI2PAKSTI34N65M5710 V 0.11 28 ATABSTP34N65M5STW34N65M5 Worldwide best RDS(on) * area332

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: MCH3484 | DMN30H4D0L

Keywords - STI34N65M5 MOSFET datasheet

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